BAT42W-E3-08 Datasheet/PDFBAT42W-E3-08 Application Field and Working Principle
BAT42W-E3-08, a small signal Schottky barrier rectifier diode, is ideal for use in different applications given its low forward voltage drop, high speed switching and high efficiency. Broadly speaking, this diode is commonly used in constant-power switching supplies and other applications that require fast switching action and low power losses.
Application Field
- Power supply systems and Polarity protection circuits
- Low power switching application
- RF and microwave circuits
- High dc voltage detectors
- Switching forward converters
Working Principle
BAT42W-E3-08 relies on tunneling to generate a voltage at its junction. The barrier voltage is essentially the same as the vacuum energy. When the voltage reaches the rated value, the current starts to flow. The voltage is the maximum of a diode at a given temperature, and the slope is different for different doping levels. During the blocking process of the diode, the avalanche breakdown charge-to-body ratio will remain constant at all frequencies. This is the principle of the diode rectification.
The performance of BAT42W-E3-08 diode largely depends on the efficiency of the epitaxy used for it. The quality of epitaxy determines the uniformity of the resistance across the chips, especially for the rectification factor, which is the difference between the maximum current DC and the minimum peak current when reverse biasing occurs. The value of the rectification factor directly affects the working performance of the diode.
Conclusion
BAT42W-E3-08 is a Schottky barrier rectifier diode, which is widely used in low power switching application, RF and microwave circuits, high DC voltage detectors, and switching forward converters. It is characterized by low forward voltage drop, high speed switching and high efficiency. The diode rectification process is mainly based on the tunneling effect, which is generated by the diode junction voltage at various temperatures. The performance of the diode largely depends on the efficiency of the epitaxy used for it.