Allicdata Part #: | BAT54W-HE3-08-ND |
Manufacturer Part#: |
BAT54W-HE3-08 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 30V 200MA SOD123 |
More Detail: | Diode Schottky 30V 200mA (DC) Surface Mount SOD-12... |
DataSheet: | BAT54W-HE3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.03306 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 800mV @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 5ns |
Current - Reverse Leakage @ Vr: | 2µA @ 25V |
Capacitance @ Vr, F: | 10pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Operating Temperature - Junction: | 125°C (Max) |
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Diodes – Rectifiers - Single – BAT54W-HE3-08 application field and working principle
Diodes – rectifiers – single are commonly used devices found in almost all modern electronics circuits. They are tiny components that allow electric current to flow in one direction, while blocking it in the opposite direction. A BAT54W-HE3-08 diode is a diode usually found in high-efficiency, low-voltage AC circuits. The BAT54W-HE3-08 is classified as a Schottky or fast-recovery type rectifier due to its significantly lower forward voltage drop, typically 0.20V~0.30V. This makes it ideal for applications that require high-efficiency, linearity, and high-reliability operation.
The BAT54W-HE3-08 diode has a wide range of applications in all kind of circuits, from simple rectifiers, battery-powered switch mode power supplies and logic circuits to more complex ones, such as switched DC-DC converters, data transmission, automotive and aviation electronics, safety systems, and pulse generators. It is an ideal choice for the design of solutions for low voltage, high current, and high frequency circuits.
The working principle of a diode is based on the P-N junction. It uses two regions with opposite electrical charges, a negative one on the N-type area and a positive one on the P-type area. In the BAT54W-HE3-08 diode, this junction is formed by Gallium-Arsenide and Aluminium-Gallium-Arsenide, with a thickness of around 0.9 um (900 nm).
When voltage is applied, the positive charge of the P-type region attracts the negative charge of the N-type region, producing an effect known as the “avalanche breakdown effect”. This generates a depletion region between the two regions, making it impossible for current to flow until the current exceeds the built-in voltage of the depletion region. This avalanche breakdown effect drastically reduces the forward voltage drop of the device, making it much more efficient than the conventional p-n type rectifiers.
The BAT54W-HE3-08 diode has a maximum repetitive reverse voltage of 15V, a maximum surge forward of 200mA, a forward voltage drop of 0.2V~0.3V, an operating temperature range of -55°C to +150°C, and a maximum storage temperature of +165°C.
In conclusion, the BAT54W-HE3-08 is a fast-recovery type rectifier with a low forward voltage drop and a wide range of applications. It provides high forward and reverse current ratings, a high surge capability, and an excellent temperature range. It makes it an ideal choice for high-efficiency, high-reliability and low-voltage AC circuits.
The specific data is subject to PDF, and the above content is for reference
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