BAV99-G3-18

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The BAV99-G3-18 is a diode array designed and produced as part of a growing range of power semiconductor devices. This diode array builds on innovations developed by the global semiconductor giant STMicroelectronics. The device is specifically designed to operate with high power levels, making it ideal for applications where a large input power is needed to achieve the desired performance.

The BAV99-G3-18 offers considerable advantages when used in the right application. It is an advanced dual high-voltage complement metal-oxide-semiconductor (CMOS) type array that operates in a symmetrical topology, allowing currents to be controlled with precision. This array is able to manage high power levels up to 18.5V and 8.5mA while still maintaining its high-quality, low-power performance.

The BAV99-G3-18 array is specifically designed for use in applications that require a large power input level, such as automotive electrical and electronic equipment, power supplies, consumer electronics, industrial applications and medical devices. The device is ideally suited for applications which need to maintain high levels of temperature tolerance and power efficiency in order to perform effectively.

The BAV99-G3-18 operates by utilizing two CMOS transistors, which are connected in parallel. One transistor acts as an on-state switch, while the other acts as a reset switch. In this way, the CMOS transistors are able to limit large inrush currents, while still providing consistent current and voltage. This makes the array ideally suited for scenarios where high power loads and voltage levels need to be managed.

As the BAV99-G3-18 array can be used in both high-voltage and high-current applications, it is capable of achieving both high current and voltage control precision. In addition, the device features a low stand-by current of less than 10 nA, making it suitable for applications where power savings are essential. These features all make the array a great choice for a range of high-power applications.

The BAV99-G3-18 array also provides protection against reverse bias and over-current conditions. This, combined with its high power handling capacity, makes the device an ideal choice for protecting high power components from overloads and short circuits.

Finally, the device is designed to meet stringent safety standards. It is RoHS compliant and UL recognized, meaning it meets the highest standards of safety and performance. It is also rated for a surge current of up to 200mA and a maximum reactance of 35 ohms.

In conclusion, the BAV99-G3-18 is an advanced diode array that provides high performance and reliability in high power applications. It is capable of handling high power levels while still maintaining its high quality, low power performance. The device is UL recognized, RoHS compliant, and features protection against reverse bias and over-current conditions. All of these features make the BAV99-G3-18 an ideal choice for a range of high power applications.

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