BAW56W/MIX

Series:	Automotive, AEC-Q101
Part Status:	Last Time Buy
Diode Configuration:	1 Pair Common Anode
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	90V
Current - Average Rectified (Io) (per Diode):	150mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 150mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	4ns
Current - Reverse Leakage @ Vr:	500nA @ 80V
Operating Temperature - Junction:	150°C (Max)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The BAW56W/MIX (Balanced Anisotropic Wurtzite semiconductor) rectifier array is an advanced semiconductor device that can provide efficient signal switching and rectification. It is a part of the family of MIX (Mixed Integrated Extrinsic) devices, which are a combination of intrinsic and extrinsic semiconductors, and includes junction field-effect transistors (JFETs), Darlington transistors and Schottky diodes. It is used in a variety of applications such as in switching applications, power management, and analog-to-digital converter (ADC) chips.

Application Field of BAW56W/MIX

BAW56W/MIX rectifier arrays have a wide range of applications due to their small size, high efficiency, and versatility. As mentioned earlier, they can be used in the design of power management devices, and they are often used in switching applications, such as in motor drive systems, motor control applications, and power converters. They have also been used in analog-to-digital converters and digital-to-analog converters for data conversion. In addition, they can be used for signal conditioning and deterministic logic applications.

Working Principle of BAW56W/MIX

The BAW56W/MIX rectifier array works by using the Schottky barrier principle. This principle states that when a metal electrode is placed near a semiconductor material, a potential barrier is created at the interface due to the natural contraction of the electron wave function near the metal. This potential barrier results in an electrical field that confines the electrons, thus forcing them to move through the diode in only one direction. When forward-biased (i.e., when the anode is connected to a source of electricity higher than the cathode), the electrons flow through the diode, and when reverse-biased (i.e., when the anode is connected to a source of electricity lower than the cathode), electron flow is blocked. The BAW56W/MIX rectifier array uses an array of diodes to create multiple potential barriers for the current to pass through. The potential barriers created by the array are referred to as voltage drops, and due to their directionality, they are often used to switch the current in certain directions. This allows the BAW56W/MIX rectifier array to be used for controlling AC and DC currents, as well as clock signals in a variety of applications.

Conclusion

The BAW56W/MIX rectifier array is a versatile and efficient semiconductor device designed to meet the needs of a wide range of applications. It uses the Schottky barrier principle, which creates potential barriers in the form of voltage drops, to control AC, DC, and clock signals. Its small size, high efficiency, and versatility make it ideal for use in power-management devices, switching applications, analog-to-digital converters, and digital-to-analog converters.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description