BAW56 Allicdata Electronics

BAW56 Discrete Semiconductor Products

Allicdata Part #:

BAW56FSTR-ND

Manufacturer Part#:

BAW56

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 85V 200MA SOT23-3
More Detail: Diode Array 1 Pair Common Anode Standard 85V 200mA...
DataSheet: BAW56 datasheetBAW56 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 85V
Current - Average Rectified (Io) (per Diode): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 2.5µA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BAW56
Description

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The BAW56 are a type of diode array which combines two separate diode junction components to create a more versatile and powerful version. It is primarily used in applications in which a wide range of current is often needed, but the device\'s wide bandgap allows for a lower voltage drop and its reliability ensures that it can be used in even the toughest conditions. The device is based on a two-layer Schottky construction, being composed of two rectifying junctions formed by two PN junctions connected in series with a common anode and a common cathode.

The device\'s main advantage is its ability to provide higher current capability in a much smaller package than traditional rectifiers, increasing efficiency and performance. This can be useful in both AC and DC applications where space-saving or higher current requirements are desirable. It can also be used in various radio frequency (RF) circuits, providing good results in terms of insulation, low noise and low power consumption.

The device can be used in many applications because its wide bandgap allows for a lower voltage drop, providing superior performance across many frequency ranges up to 50MHz. This is particularly useful for applications in which high voltage output is needed. In addition, the device\'s high circuit isolation prevents any possibility of crossover effects between stages, protecting the circuit from suppressing signals.

The working principle of the BAW56 is based on the basic principles of a PN junction diode. These are the same principles found in all Schottky barrier diodes, such as the common 1N4007 or 1N4008. The Schottky barrier limits the reverse leakage current, giving it superior performance in terms of capacitance. The device also works by providing a reverse blocking capacity, preventing any current flow backwards.

The device also provides superior power dissipation and power handling capabilities, allowing it to operate at higher temperatures and currents than traditional rectifiers. This allows it to be used in high-power applications and in extreme environmental conditions. The device is also extremely fast, having switching times of around 100 ns which make it ideal for applications where speed is essential.

The BAW56 is a highly versatile diode that can be used in a wide range of applications, from AC to DC, from radio frequency to high voltage applications. Its wide bandgap allows it to provide superior performance in comparison to traditional rectifiers, while its size makes it suitable for a variety of uses. Its fast switching time allows it to be used in circuits where speed is necessary, and its high power dissipation allows it to be used in extreme environmental conditions. This makes it an invaluable tool for many different types of electronics.

The specific data is subject to PDF, and the above content is for reference

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