Allicdata Part #: | BAW62_T50A-ND |
Manufacturer Part#: |
BAW62_T50A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 75V 300MA DO35 |
More Detail: | Diode Standard 75V 300mA Through Hole DO-35 |
DataSheet: | BAW62_T50A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 300mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 5µA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
Base Part Number: | BAW62 |
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BAW62_T50A Application Field and Working Principle
The BAW62_T50A is a diode rectifier single from Infineon Technologies. It is a fast switching, low forward voltage rectifier with excellent thermal behavior for applications including power supply and freewheeling.
It is based on the latest HV thick-wafer PowerMOS process technology and is qualified in accordance with AEC Q101, ensuring superior performance, reliability, and superior ease of use. The thin layer between the chip and the substrate provides good thermal performance, enabling fast conduction of heat and thus extended performance. The resulting device is able to provide low forward voltage drop over the full voltage and current range.
The BAW62_T50A has a guideline focused on industrial, automotive and professional datacom/telecom applications. The superior performance and low switching losses make it attractive for applications that require low-power operation and extremely fine current-handling capabilities.
The purpose of the BAW62_T50A is to provide an extremely cost-effective yet reliable solution for rectification needs. It has fast switching characteristics, low forward voltage drop, excellent thermal behavior and can be used in a broad range of applications. The fast switching characteristics provide excellent current level handling for applications in industrial, automotive and professional datacom/telecom applications. The low forward voltage drop results in lower energy losses and, as such, allows improved efficiency in the application concerned.
The working principle of the BAW62_T50A is based on an optimized semicondutor layer thickness that enables a very low forward voltage drop over the full voltage and current range. This ensures a secure switching capability and improved performance. Combined with a low-resistance solder joint, the efficient heat conduction of the semiconductor layer ensures superior thermal performance. The use of the latest HV thick-wafer PowerMOS also ensures excellent reliability and performance.
In summary, the BAW62_T50A is a diode rectifier single that is uniquely designed for power management and switching needs. It has excellent thermal behavior and fast switching characteristics that both offer superior performance and low-power operation. The low forward voltage drop results in improved efficiency and provides a reliable solution for applications in industrial, automotive and professional datacom/telecom applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAW62 | ON Semicondu... | -- | 7504 | DIODE GEN PURP 75V 300MA ... |
BAW62,113 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAW62,133 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAW62,143 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAW62_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 75V 300MA ... |
BAW62_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 75V 300MA ... |
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