BAW62,113

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	75V
Current - Average Rectified (Io):	250mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1V @ 100mA
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	4ns
Current - Reverse Leakage @ Vr:	5µA @ 75V
Capacitance @ Vr, F:	2pF @ 0V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	ALF2
Operating Temperature - Junction:	200°C (Max)
Base Part Number:	BAW62

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Introduction

BAW62,113 is a single rectifier diode which is widely used in telecommunications and data transmission applications. This diode is a silicon planar construction, packaged in a TO-220 package with a double Epoxy base. It offers a wide variety of features such as protection from reverse voltages, noise rejection, temperature stability, and fast switching times. In this article, we will discuss the application field and working principle of BAW62,113.

Application Field

BAW62,113 is used in a variety of applications, including power supply rectification, signal conditioning, data transmission, and switching. It is often employed in telecommunications and data transmission applications, used to protect equipment from transient over-voltages. BAW62,113 can also be used in switching power supplies and DC/DC converters to provide a high degree of noise rejection and protection from reverse voltages.In addition, BAW62,113 can handle higher operating temperatures, making it suitable for use in high-power and high-speed industrial applications. It is also used for current rectification in applications such as motor controllers, motion detectors, and voltage regulators.

Working Principle

The working principle of BAW62,113 is based on the “Silicon Controlled Rectifier” (SCR) principle. The diode consists of a PN junction which has been employed by the mechanic of the diode to provide the controllability and stability of the current flowing through the diode.When an alternating current passes through the diode, its voltage will rise to the peak of the wave and is then inverted, leading to a decrease in current flow. This allows the current to be controlled and unidirectional flow can be maintained. The PN junction of the diode stores an amount of charge which is used to provide the controllability of current flow. When the diode reaches near saturation, the current begins to flow rapidly and the junction itself maintains a strong electric field which prevents further increase in current. This mechanism is referred to as avalanche breakdown, as it is characterized by avalanche multiplication of charge carriers which results in a sharp increase in current.

Conclusion

In this article, we discussed the application field and working principle of BAW62,113. This diode is highly reliable, offering protection against transient over-voltages, noise rejection and temperature stability. It is often used for telecommunications and data transmission applications, as well as in power supply rectification, signal conditioning, and switching. The working principle is based on the SCR principle, and its PN junction stores a charge which allows the current to be controlled and maintained in one direction.

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