Allicdata Part #: | BAW62,133-ND |
Manufacturer Part#: |
BAW62,133 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE GEN PURP 75V 250MA ALF2 |
More Detail: | Diode Standard 75V 250mA (DC) Through Hole ALF2 |
DataSheet: | BAW62,133 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 250mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 5µA @ 75V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | ALF2 |
Operating Temperature - Junction: | 200°C (Max) |
Base Part Number: | BAW62 |
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The BAW62,133 is a popular single high dv/dt, ultra high speed rectifier diode used in many applications. The device is designed with a low capacitance package which makes it ideal for high speed switching applications, as well as for driving voltage spike sensitive circuits.
The BAW62,133 diode is a silicon epitaxial planar device with an integrated junction capacitor, which provides the high dv/dt capability. The device has an optimized switching behaviour and a low forward voltage of just 0,45V. The diode also comes with a low capacitance package, which helps to reduce the switching losses, and allows the device to operate at ultra high speed.
The BAW62,133 is suitable for many applications. It enables high speed switching of switches, transistors and integrated circuits (ICs). It is also suitable for protection of ICs, as it can absorb voltage spikes and reduce the chances of device failure. Additionally, it can be used as an AC-DC converter, as it can block DC signals and allow AC signals to pass. It can also be used to protect sensitive circuits from high voltage transients.
The BAW62,133 is an ultra-fast recovery diode, meaning that it can switch from its off-state to its on-state much quicker than the usual diode. This attribute makes it the ideal choice for high speed switching applications, where it is important to have a fast response time. Likewise, the low capacitance package of the BAW62,133 makes it ideal for driving voltage spike sensitive circuits, which need protection from high voltage transients.
The working principle of the BAW62,133 is quite simple. When the device is in its off state, the current through the diode is blocked and no voltage is present across the diode. When a voltage is applied to the diode, the current starts to flow through it. As the voltage increases, the current through the diode increases, until the diode reaches its maximum reverse voltage rating. The maximum reverse voltage rating defines the point beyond which the current through the device will not increase any further.
In conclusion, the BAW62,133 is a popular single high dv/dt, ultra high speed rectifier diode used in many applications. This device is designed with a low capacitance package, which makes it ideal for high speed switching applications, as well as for protection of ICs, AC-DC conversion, and protection of sensitive circuits. The device operates on a simple working principle, whereby it blocks current when in its off state, and allows current to flow when a voltage is applied.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAW62 | ON Semicondu... | -- | 7504 | DIODE GEN PURP 75V 300MA ... |
BAW62,113 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAW62,133 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAW62,143 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 75V 250MA ... |
BAW62_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 75V 300MA ... |
BAW62_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 75V 300MA ... |
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