BC328_J35Z Allicdata Electronics
Allicdata Part #:

BC328_J35Z-ND

Manufacturer Part#:

BC328_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 800mA 100MHz 625m...
DataSheet: BC328_J35Z datasheetBC328_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC328
Description

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The BC328_J35Z (BC328_J35Z) is a high-performance NPN silicon transistor that is widely used in a variety of applications. This transistor is a type of bipolar junction transistor (BJT), which is made of two types of semiconductor materials, typically germanium (Ge) and silicon (Si).

In BJT transistors, the majority carriers are electrons, while the minority carriers are holes. The base-collector junction of the BC328_J35Z is formed by the combination of n-type (for releasing majority carriers) and p-type (for releasing minority carriers) semiconductor materials. As a result, when current enters the device through the base region, the electrons are attracted to the collector region. Meanwhile, the holes are attracted to the emitter region.

The single BC328_J35Z is a 2-pin device, consisting of a collector (C) and a base (B) for injecting current. The maximum power dissipation of the component is 2.2 watts, with a junction temperature range from -55 to +150 °C. The device also offers an operating temperature range of -60 to +150 °C as well as a storage temperature range of -65 to +160 °C. The BC328_J35Z has a breakdown voltage of 30 volts, with a minimum collect-emitter breakdown voltage of 60 volts. Its continuous collector current rating is 1.27 amperes, and its maximum collector dissipation is 1.15 watts.

The BC328_J35Z is an ideal component for a variety of applications. Its capability to provide fast switching speeds and low power dissipation makes it ideal for use in low-power amplifier circuits, high-speed and high-current switching applications, and logic circuits. This component is also great for use in voltage regulators, such as pulse-width modulated (PWM) controllers and linear regulators.

The device’s common-emitter configuration also allows it to work as a line-level amplifier when used with a voltage source. Its high-gain feature makes it great for use in linear circuits and instrumentation amplifiers. Furthermore, its low-power capabilities and high-current ratings make it excellent for use in automotive and other remote control applications.

The BC328_J35Z has a lot of advantages, and this is why it is a popular component in many industries. Its excellent switching and current-handling capabilities make it suitable for a wide range of applications. Its low power dissipation, high breakdown voltage, and excellent switching speed are what make it an ideal component for a variety of applications. Furthermore, its excellent temperature stability and high-frequency characteristics mean that it can handle extreme temperature ranges and can be used in many high-speed applications.

Overall, the BC328_J35Z is an excellent single-pole NPN bipolar junction transistor that is suitable for many different applications. Its capability to efficiently handle high current ratings as well as its fast switching speeds and low power dissipation make it an ideal choice for many power electronics and logic applications. Furthermore, its superb temperature stability and high-frequency characteristics make it a great choice for many automotive, linear, and high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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