BC327-40,116 Allicdata Electronics
Allicdata Part #:

BC327-40,116-ND

Manufacturer Part#:

BC327-40,116

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PNP 45V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 625mW...
DataSheet: BC327-40,116 datasheetBC327-40,116 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC327
Description

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BC327-40,116 is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT) for use in general Purpose applications. It features an active collector-to-emitter region and three terminals, namely base, collector, and emitter. This device is used with moderate to high gain amplification and it is perfect for switching applications.

When used in the amplifying stage, the BC327-40,116 is able to provide greater gain than a single PNP or NPN transistor. It has a wide range of collector-to-emitter voltage rating and its collector-to-emitter saturation voltage is relatively low. In switching applications, it can be utilized together with other PNP and NPN transistors to provide a high-speed, high-current switch with minimal power dissipation.

The working principle of BC327-40,116 is based on the operation of a BJT. In this device, a small electric current (base current) is used to control a much larger electric current (collector current). The collector current is derived from the emitter current.

The base-emitter voltage is used to control the base current. When the base-emitter voltage increases, the base current also increases, which in turn increases the collector current. This process is known as the avalanche breakdown. This phenomenon is used in a BJT to regulate the collector current.

In the BC327-40,116, the collector current is proportional to the base current, hence the smaller the value of the base current, the lower the value of the collector current. At the same time, the collector to emitter voltage rating determines the maximum collector-to-emmitter voltage that the transistor can handle. The saturation voltage of the BC327-40,116 is approximately 0.7 V.

The BC327-40,116 is commonly used in various application fields like general purpose amplifiers, communications circuits, and switching applications. It is also used in radio frequency (RF) amplifiers, linear amplifiers, audio amplifiers, and power supplies. In addition, this device is able to provide good input impedance, low power dissipation, and high voltage and current ratings.

In summary, the BC327-40,116 can be classified as a bipolar junction transistor (BJT) single device, commonly used in general purpose applications. Its principle of operation relies on controlling the collector current of the device with small base current. It offers a wide range of collector-to-emitter voltage rating, small saturation voltage, good input impedance, low power dissipation, and high voltage and current ratings. The BC327-40,116 is perfect for amplifying and switching applications.

The specific data is subject to PDF, and the above content is for reference

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