BC32840TA Allicdata Electronics
Allicdata Part #:

BC32840TA-ND

Manufacturer Part#:

BC32840TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 800mA 100MHz 625m...
DataSheet: BC32840TA datasheetBC32840TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC328
Description

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BC32840TA is a PNP high voltage bipolar junction transistor (BJT). It is a single type BJT. It is usually used as an amplifier in high-power radio frequency (RF) applications and as a switch in medium- and high-power switching circuits. It has excellent features, such as good breakdown voltage, low noise, and good linearity. It is also suitable for high-gain, low frequency applications.

The BC32840TA transistor has two electrodes that are used for current flow. One electrode, the base, is used to control the current flow between two other electrodes, the emitter and collector. This transistor also has two types of connections, series and parallel. In series connection, the base-emitter-collector arrangement works as a single transistor and is ideally suited for large gain applications. In parallel connection, the interconnection of two or more transistors works as an amplifier, allowing it to be used in higher powered applications.

The working principle of the BC32840TA is that when current flows through the base, it produces an avalanche breakdown, a phenomenon in which the junction between the emitter and the base breaks down. This creates a current flow from the emitter to the collector. When this current tries to pass through an external device, a voltage is generated, which produces an output signal from the collector. The magnitude of this signal depends on the magnitude of the current flow through the base.

The primary application fields of the BC32840TA include RF power amplifiers, RF amplifiers, radio receivers and transmitters, microwave amplifiers and oscillators, audio amplifiers, switching circuits, and logic circuits. Its high voltage rating, low noise, and good linearity make it suitable for all types of RF and microwave applications. Its high switching speed and low power consumption are also attractive features.

In summary, the BC32840TA is a single bipolar junction transistor with excellent characteristics. It is suitable for use in high voltage, high frequency, radio-frequency, and microwave applications, as well as audio and switching circuits. It has low noise and good linearity, as well as high switching speed and low power consumption. These features make the BC32840TA an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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