Allicdata Part #: | BC517_J35Z-ND |
Manufacturer Part#: |
BC517_J35Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 30V 1.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A... |
DataSheet: | BC517_J35Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1.2A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30000 @ 20mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC517 |
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The BC517_J35Z is a general purpose NPN transistor in a metal can. It is a long lead type intended for use in applications as a switching device or amplifier. This particular type has a power dissipation of 500mW (1W peak). It is a medium power transistor that is used for a variety of applications with a suitable power source.
The BC517_J35Z is a bipolar junction transistor (BJT). A BJT is made up of three semiconductor layers, the base layer, the emitter layer and the collector layer. The collector-base junction is forward-biased and the emitter-base junction is reverse biased. The current flow through the three layers controls the current flow through the device as a whole. In a NPN transistor the current flow is from collector to emitter when the base is positive, since the emitter-base junction is reversebiased.
The BC517_J35Z can be used in a variety of applications including switching, amplifying, and control circuitry. It is often used as a driver transistor in high current switching applications. It can also be used as a general purpose amplifier or voltage regulator. In addition, it can be used as a pulse width modulator in pulse wave modulation, such as Class-D amplifiers.
Although the BC517_J35Z is a general purpose transistor, it is not suitable for some applications. It is not recommended for use in high speed applications, high frequency applications, or high power applications. It should also not be used in AC switching applications.
The power dissipation of the BC517_J35Z must be taken into consideration when designing a circuit with this type of transistor. The maximum power dissipation of the BC517_J35Z is 500mW (1W peak), and exceeds the maximum power dissipation of other transistors in the same family. Therefore, the circuit design should be optimized and adequate heat sinks or other thermal management techniques should be provided in order to prevent overheating and potential damage to the transistor.
In addition, the operating temperature of the BC517_J35Z should also be taken into consideration. The maximum operating temperature of the transistor is in the range of -55 to +150 °C. Therefore, the circuit design should take into account the operating temperature of the transistor, as well as the environment in which the device will be used, in order to ensure that the device is not operated at temperatures beyond the manufacturer\'s recommended range.
The BC517_J35Z is an easy to use, versatile NPN transistor that is capable of providing reliable performance in a variety of applications. While it is not suitable for some applications, such as high speed or high power applications, it is nonetheless a very useful and widely used transistor for general purpose applications. With the proper circuit design and adequate heat sinking, the BC517_J35Z can provide excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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