BC51PA,115 Allicdata Electronics
Allicdata Part #:

1727-1251-2-ND

Manufacturer Part#:

BC51PA,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 45V 1A SOT1061
More Detail: Bipolar (BJT) Transistor PNP 45V 1A 145MHz 420mW S...
DataSheet: BC51PA,115 datasheetBC51PA,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05586
6000 +: $ 0.05027
15000 +: $ 0.04469
30000 +: $ 0.04190
75000 +: $ 0.03714
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 420mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: 3-HUSON (2x2)
Base Part Number: BC51PA
Description

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Transistors – Bipolar (BJT) – Single

BC51PA,115 Application Field and Working Principle

Bipolar junction transistors (BJTs) are three-terminal devices composed of two diodes connected side-by-side in a semiconductor material. BJTs are sometimes referred to as BJT transistors or simply transistors and are used as current/voltage regulators and amplifying/switching devices. The BC51PA,115 is an NPN silicon BJT-type transistor that has been specially designed for use in switching, power control, and power conversion applications.

Characteristics of the BC51PA,115

The BC51PA,115 is an NPN transistor that has a maximum collector-emitter voltage of 65V and a maximum collector current of 800mA. The maximum power dissipation is 625mW and the package has a TO-92 housing. It has a maximum collector-emitter voltage of -0.35V, a forward current range of -0.1A to 800mA, a reverse current range of -0.1A to -25mA, and an off-state resistance of 500 ohms.

Application Fields

The BC51PA,115 can be used in a wide range of applications such as switching, power control, and power conversion. It is suitable for use in power supplies and for signal control in digital circuits and for switching circuit applications. The BC51PA,115 is also ideal for controlling low-power analog and digital circuitry.

Working Principle

The BC51PA,115 is based on the principle of junction-coupling. This means that current flowing through one diode will induce an opposite-polarity charge in the adjacent diode. When the two bipolar junctions are in close proximity, this induced current will be maximized. The magnitude of this current flow is dependent on the voltage applied to the junction junctions, as well as the collector-emitter voltage rating of the transistor. This means that the BC51PA,115 can effectively control the current flow between its collector and emitter terminals.

Conclusion

The BC51PA,115 is a reliable and robust NPN silicon BJT-type transistor that is suitable for use in a variety of applications. It is capable of controlling current flow, switching, and power control and conversion applications. The BC51PA,115 has a maximum collector-emitter voltage of 65V and a maximum collector current of 800mA. It also has a maximum power dissipation of 625mW and a TO-92 package housing. It is based on the principle of junction-coupling and is capable of controlling the current flow between its collector and emitter terminals.

The specific data is subject to PDF, and the above content is for reference

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