Allicdata Part #: | BC517ZL1G-ND |
Manufacturer Part#: |
BC517ZL1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 30V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 1A 2... |
DataSheet: | BC517ZL1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30000 @ 20mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC517 |
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BC517ZL1G is a type of bipolar junction transistors (BJT) used in various electronic applications. The type of transistor (also known as a BJT) is a single, low power b-e PNP type. It is rated at 0.1 mA, with a maximum collector current of 25 mA and an operating voltage range from -40 up to 200 V.
A bipolar junction transistor is a type of active semiconductor device made of two junction diodes connected back to back in an N-type and P-type semiconductor environment. It is usually composed of a layer of N-type material between two layers of P-type material. When the base-emitter diode is forward biased, current flows freely through the base-emitter junction and is able to control the current flow in the collector-emitter junction.
BC517ZL1G features a maximum power dissipation of 625 mW and a maximum collector-base voltage of 200 V. It is designed to operate at a collector-emitter saturation voltage of 1.5 V and can withstand a collector-emitter voltage of 400 V max. It has a maximum switching speed of 15 ns. The transistor has an ambient temperature of -55 to +150 °C.
When used properly, BC517ZL1G is suitable for various electronic applications. It is ideal for use in low to medium power applications that require fast switching action such as RF amplifiers, switching amplifiers, pulse modulators, and push-pull amplifiers. It is also suited for use in power switching circuits, power amplifier inputs and outputs, and general-purpose transistor circuits.
The working principle of BC517ZL1G is based on the operation of a bipolar junction transistor. When the base-emitter diode is forward biased, a current flow is established between the base and emitter. This current flow controls the collector-emitter current and is able to switch on and off the collector current, thus controlling the transfer of power from the collector to the emitter.
In addition, the transistor has a wide variety of uses in a wide range of applications. It can be used in communication devices, automotive and industrial controllers, digital television and radio, home audio and video systems, computer peripherals, and other consumer electronics. It can also be used in automotive and telecom power supplies, as well as in professional audio systems and recording devices.
BC517ZL1G is a versatile transistor, and can be used in a wide range of applications. It is suitable for use in low power applications with fast switching action, as well as in automotive, telecom, and professional audio applications. Thanks to its low power dissipation, high collector-base voltage and fast switching speed, it is widely used in various electronic applications.
The specific data is subject to PDF, and the above content is for reference
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