BC640G Allicdata Electronics
Allicdata Part #:

BC640G-ND

Manufacturer Part#:

BC640G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 625m...
DataSheet: BC640G datasheetBC640G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 625mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC640
Description

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BC640G is amongst the class of transistors called Bipolar Junction Transistors (BJTs) used in single applications. A type of semiconductor device, it is composed of three terminals, the emitter, collector and base. The transitions between the layers of semiconductor materials in the BJT enable it to be used for amplifying signals and switching circuits. Furthermore, since the BJT has both input and output pins, it is used for power control of heavy-laden circuits.

The BC640G has a fairly high power rating and the voltage gain can be adjusted using the structure of the base layer. As a single or complementary transistor, the BC640G is extremely popular in the market and suitable for a variety of applications. For example, it is well suited for use in audio amplifiers, linear amplifiers, circuits requiring low supply voltage, alarms and other applications where a low noise figure is desirable.

In terms of its working principle, the BC640G basically operates by using electrons from the base region. A reverse bias voltage is used on the collector and base junction, so that the electrons are attracted towards the collector. The base current that is fed into the transistor controls the operation of electrons.

Several factors come into play when determining the performance of a BC640G transistor. These include power rating, base current, collector current, collector voltage, collector resistance and temperature. The collector current and base current can both be adjusted to change the current gain, power gain and voltage gain of the transistor.

One of the best features of the BC640G is that it runs very efficiently and consumes very little power. Furthermore, it is relatively easy to manufacture and can also be used in complementary pairs in applications where voltage gain is critical.

When considering the use of the BC640G in any application, it is important to understand its specifications and limitations, as well as its functionality. As a single transistor or in complement pairs, the performance of the BC640G is impressive in a wide range of applications. The ability to adjust the current and voltage gains of the transistor also makes it highly versatile, so it can often be used in a variety of applications for different requirements.

The specific data is subject to PDF, and the above content is for reference

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