Allicdata Part #: | BC640ZL1G-ND |
Manufacturer Part#: |
BC640ZL1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 625m... |
DataSheet: | BC640ZL1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC640 |
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BC640ZL1G is a type of transistor belonging to the category Transistors - Bipolar (BJT) - Single. It is a PNP, small signal, medium power transistor. It can be used in a variety of applications, such as audio amplifiers, switching circuits, low-level audio preamplifiers, music amplifiers, and more.
The BC640ZL1G is designed to operate over a wide range of temperatures and current levels, making it suitable for many applications. It has a low collector-emitter saturation voltage, and can handle high current and voltage. The transistor also features a fast, high current capability and a low noise figure.
The BC640ZL1G is composed of three layers of semiconductor materials. A base layer, which is the most important layer, is composed of a thin doped layer of silicon. The collector layer is made up of a thicker and more heavily doped layer of silicon, and the emitter layer is composed of a thin doped layer of boron. The three layers of silicon are connected together internally through a variety of connections, known collectively as the “bonding layer”.
The working principle of the BC640ZL1G is based on the fact that when a small electrical current is applied to the base layer, it creates a hole in the layer that causes electrons to flow from the emitter to the collector layer. This creates a flow of current which can be used to power the device. The voltage between the collector and emitter needs to be carefully controlled to achieve the best performance.
The BC640ZL1G is widely used in many fields, from consumer electronics to industrial control. Its low cost and reliable operation make it an ideal choice for a variety of applications. It can be used to drive motors, relays, and many other types of loads. It is also widely used in amplifiers, such as audio and music amplifiers, as well as signal conditioning circuits. This transistor can also be used in switching applications, as it is capable of fast switching speeds.
The BC640ZL1G is a versatile device, and its wide range of performance characteristics makes it ideal for a variety of applications. It is well suited for applications which require high power, fast switching speeds, or low noise levels. It is also a reliable and cost-effective device, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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