
Allicdata Part #: | BC640,116-ND |
Manufacturer Part#: |
BC640,116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 80V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 145MHz 830mW T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 830mW |
Frequency - Transition: | 145MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC640 |
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Bipolar Junction Transistor (BJT) is a type of Transistor that uses both electrons and holes for its operation. The BC640/116 is a PNP type BJT manufactured by STMicroelectronics. This device is designed to work in high-frequency applications. It can handle high current and power levels, and its small size ensures that it can be easily incorporated in any circuit design.
A BJT consists of three regions of semiconductor material. The first region is the Base. The Base has a thin layer of high-resistance material between the Emitter and the Collector. This high-resistance material gives the transistor its characteristic voltage and current gains. When a voltage is applied between the Base and the Emitter, electrons flow in the forward direction, while holes are repelled. As a result, current flows between the Collector and the Emitter. A voltage is also produced in the Base-Collector circuit, which is used to control the current flowing between the Collector and the Emitter.
The BC640/116 is a PNP type BJT, which means that when the Base is made positive with respect to the Emitter, current flows through the device from the Collector to the Emitter. This type of BJT is best suited for applications that require high voltage and current gains. The device is capable of handling high frequencies and has high current-rating capabilities for its small size. In addition, the device is less prone to thermal runaway, making it ideal for use in power amplifier applications.
The BC640/116 has a voltage gain of 45 dB with a maximum collector-emitter voltage of 16 V and a power gain of 30 dB with a maximum power output of 10 W. The device has excellent thermal stability and is capable of operation at frequencies up to 1 GHz, making it a great choice for use in high-frequency applications. The device also has excellent avalanche characteristics and a low output capacitance, ensuring that it is suitable for use in low-noise, low-distortion applications.
The BC640/116 has a number of applications in the fields of communications, audio and video, power control and high-speed operations. In audio applications, the transistor is used in power amplifiers and is often used in combination with other components to achieve high-power outputs. In video applications, the transistor is used in high-frequency switching and power control circuits. In communication applications, the transistor is used for high-frequency signal amplification and for power control. In power control applications, the transistor is used to vary the power levels of devices in order to save energy.
The BC640/116 is a popular choice for many applications due to its high voltage and current gains, excellent thermal stability and its small size. The device is an excellent choice for use in high frequency circuits, as it is capable of operation up to 1GHz. The device is also well-suited for use in power control circuits, as it has excellent avalanche characteristics and is capable of handling power levels up to 10W. The device is suitable for a wide range of applications and is well-suited for use in many different types of circuits.
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