BC817K40WH6327XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	250mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	BC817

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Introduction

BC817K40WH6327XTSA1 is a general purpose small-signal NPN transistor from Infineon Technologies. It has a variety of applications, and its working principle relies on the movement of charge carriers. In this article, the application field and working principle of the transistor will be discussed in greater detail.

Application Field

BC817K40WH6327XTSA1 is a member of the BC817 family of transistors which are low power, general purpose, NPN, silicon monolithic junction transistors. Due to its low power consumption, high input impedance and high current gain, the BC817 family is frequently used in a variety of applications.A few of the common applications include linear amplifiers, current regulators, high frequency switching, and signal buffers. Due to its favorable input characteristics, it is well-suited to working with low-impedance DC signals. It can be used in power supplies and audio circuits to boost the signal level at low frequencies. Additionally, the BC817 family of transistors are used in automotive electronics, consumer electronics, and medical electronics.

Working Principle

The BC817K40WH6327XTSA1 is a Bipolar Junction Transistor (BJT) and belongs to the Single type. Its working principle is based on the movement of charge carriers. The principle of operation of the BJT is based on the movement of majority and minority carriers. The transistor consists of three layers, an emitter layer, a base layer and a collector layer.When there is a small current at the base, a large current can be drawn through the emitter and the collector. This is because the base layer of the transistor acts as a gate, allowing the current to pass from the emitter to the collector. Majority carriers, which are free electrons, move from the emitter to the base, where they are swept away by minority carriers. The minority carriers, which are holes, then move from the base to the collector, allowing the current to flow from the emitter to the collector.

Conclusion

The BC817K40WH6327XTSA1 is a small signal Bipolar Junction Transistor (BJT) from Infineon Technologies and it is part of the BC817 family. Due to its low power consumption, high input impedance and high current gain, the BC817 family is frequently used in a variety of applications, including linear amplifiers, current regulators, high frequency switching and signal buffers.The working principle of the BC817K40WH6327XTSA1 is based on the movement of majority and minority carriers. When there is a small current at the base, a large current can be drawn from the emitter to the collector. The majority carriers move from the emitter to the base, where they are swept away by the minority carriers, which then move from the base to the collector, allowing the current to flow.

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