BC817K16E6433HTMA1

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The BC817K16E6433HTMA1 is a type of transistor. It is classified as a bipolar junction transistor (BJT) single, which refers to its three-terminal format. The term "bipolar” refers to the nature of the device, wherein both electrons and electron holes participate in conduction.

This transistor mainly finds applications in signal amplification. It is suitable for many kinds of electrical circuits including voltage-controlled oscillators, amplifiers, and transmitters. The transistor can also be used as an electronic switch when combined with a suitable resistor.

A BJT operates as a current-controlled device by common emitter. In this circuit, it has two input terminals, namely the base and the emitter. When the base input increases in voltage, the device will conduct current through the collector and emitter. In contrast, when the voltage of the base decreases, the current conduction will also be inhibited.

The BC817K16E6433HTMA1 has a power dissipation of 150 mW, while the maximum operating junction temperature is 150 °C. The transistor is designed with an integrated feature where both collector and emitter have the same electrical potential. This helps it to function properly in a wide range of applications.

The maximum collector-emitter voltage for the BC817K16E6433HTMA1 is 40 V. Its maximum collector current is 16 mA, with a gain bandwidth product of 33 MHz. This semiconductor device has a breakdown voltage of 5 V, a collector-base capacitance of 0.19 pF, and a collector-emitter capacitance of 0.1 pF.

The BC817K16E6433HTMA1 offers great durability and reliability, having a long life expectancy of up to 100,000 cycles. Therefore, it is one of the more popular devices which find use in many different industries. It is also easy to install and maintain, making it an ideal solution for many applications.

To summarize, the BC817K16E6433HTMA1 is a type of bipolar junction transistor (BJT) single which finds applications in many different fields and circuits. It is designed to have a long life expectancy and offers great reliability. The features of this transistor, such as the collector-emitter voltage and bandwidth product, make it suitable for a range of applications where accuracy is important.

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