BC817-16-7-F Allicdata Electronics

BC817-16-7-F Discrete Semiconductor Products

Allicdata Part #:

BC817-16FDITR-ND

Manufacturer Part#:

BC817-16-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 45V 500MA SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 310m...
DataSheet: BC817-16-7-F datasheetBC817-16-7-F Datasheet/PDF
Quantity: 18000
Stock 18000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 310mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BC817
Description

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The BC817-16-7-F is a PNP bipolar junction transistor (BJT) used in a wide variety of electronic applications. This small, low power BJT is able to switch and amplify signals, can be used as a power regulator, electrical current amplifier, and much more.

As a small signal transistor, the BC817-16-7-F consists of three separated layers, the emitter, base, and collector. The emitter is the central layer and is the main power supply. It is controlled by the base layer, which has a low voltage across it that is used to regulate the current flow between the emitter and collector layer.

When a voltage is applied to the emitter, electrons flow towards it and a current is generated. This current is then amplified by the collector to produce higher power output which can be used to control current and voltage levels in a circuit.

The BC817-16-7-F has various uses across a wide range of applications, from radio frequency amplifiers to power supply regulators. For example, it can be used in applications that require high-voltage switching and amplifying, such as RF amplifiers, DC-DC converters, and power amplifiers. It can also be used in low-direct-current (DC) applications such as inswitch mode power supplies (SMPS) and light dimming controls.

The BC817-16-7-F is capable of switching and amplifying signals up to a power rating of 500mWatts. It has a maximum voltage of 40 volts and a maximum current rating of 200mA. This transistor is also very small in size, measuring just 3x2x0.65 millimeters, making it well suited for applications that require space-saving components.

The BC817-16-7-F has a low voltage drop of only 0.15 volts, which makes it efficient and reliable in applications requiring high power and low noise. The transistor also operates at a low noise figure of 45dB, making it suitable for noise-sensitive applications.

In addition, the BC817-16-7-F has excellent switching time and low power dissipation, making it ideal for applications requiring frequency response and low power consumption. The device is also relatively tolerant to environmental conditions such as temperature and humidity.

In conclusion, the BC817-16-7-F is a versatile and reliable device suitable for a wide range of electronic applications. It is a small, low power bipolar junction transistor capable of switching and amplifying signals up to a power rating of 500mWatts and has a low voltage drop of 0.15 volts, making it efficient and reliable. The transistor also has excellent switching time, low power dissipation, and is room temperature and humidity tolerant, making it suitable for a wide range of applications requiring frequency response, noise sensitivity, and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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