Allicdata Part #: | BC860AMTF-ND |
Manufacturer Part#: |
BC860AMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 150MHz 310m... |
DataSheet: | BC860AMTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 2mA, 5V |
Power - Max: | 310mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BC860 |
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BC860AMTF is a type of bipolar transistor, also known as a BJT or bifilar junction transistor. It has a low voltage drop and is suitable for a variety of applications, including linear and switching electronic circuits. As a single-chip solution, it eliminates the need for additional components to ensure reliable operation.
BC860AMTF is a high power transistor with a power dissipation rating of 6W. It can handle up to 20A of current and operates from a minimum of 6V to a maximum of 40V. The transistor has a low forward voltage drop of 0.47V, making it suitable for low voltage applications such as voltage regulators and DC motors. Additionally, it features high switching speed, making it suitable for high performance circuits.
BC860AMTF also features high collector to emitter breakdown voltage, with a maximum voltage of 950V, making it suitable for use in circuits with large voltages. The transistor is also able to provide a wide range of current gains, with the typical gain range being between 50 and 90.
BC860AMTF can be used in a wide range of applications, including inverters, switching power supplies and converters, small-signal amplifiers, low-voltage circuits and power relays. Additionally, it can also be used for switching and for current-limiting applications.
The working principle of BC860AMTF is based on the principles of a bipolar junction transistors. A BJT consists of three terminals – the collector, the base and the emitter. When a voltage is applied between the base and the emitter, this causes electrons to move from the emitter to the base. This movement of electrons causes a current to flow from the collector to the emitter, which can then be used to control the flow of current in a circuit.
The current gain of a BJT is determined by the ratio of the collector current to the base current. This is known as the common emitter current gain or hFE. The gain of BC860AMTF varies depending on the specific application, but in general it has a relatively high current gain.
Overall, BC860AMTF is a versatile and reliable single-chip solution that is suitable for a variety of power applications. It is able to provide high current gains, low forward voltage drop, and high breakdown voltage, making it suitable for high voltage and low voltage switching applications. Additionally, its high switching speed makes it suitable for high performance circuits.
The specific data is subject to PDF, and the above content is for reference
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