BC869,135 Allicdata Electronics
Allicdata Part #:

BC869,135-ND

Manufacturer Part#:

BC869,135

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 20V 1A SOT89
More Detail: Bipolar (BJT) Transistor PNP 20V 1A 140MHz 1.2W Su...
DataSheet: BC869,135 datasheetBC869,135 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.09320
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 1.2W
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BC869
Description

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BC869,135 Application Field and Working Principle of Single Bipolar Junction Transistor

Single bipolar junction transistor (BJT) is a three-terminal electronic semiconductor device that uses two p-n junction diodes. This type of electronic device can be used for several purposes, including amplification, switching, voltage regulation, signal modulation and signal mixing. The BC869,135 is a common type of BJT. It has a very good distortion performance and a wide gain bandwidth product. It also has a low saturation voltage and a wide operable temperature range.

Application Field

Based on its features and characteristics, the BC869,135 single BJT can be used in some critical applications, such as amplifier circuits, voltage-controlled oscillators, automatic gain control circuits, phase-locked loop emulators, linear regulators, power amplifiers, etc.

Working Principle

The BC869,135 single BJT has a wide range of affecting factors, including collector base reverse bias voltage, base-emitter saturation voltage, collector-emitter saturation voltage, base current, collector current and power dissipation. Thus, it can work differently under different conditions.

When a small base current flows through the BC869,135 single BJT, the two p-n junction diodes create a collector-base avalanche current that, in turn, causes a large collector current. The collector current is proportional to the base current and is, therefore, greatly amplified. This amplification makes the collector current much larger than the base current, creating a very large current gain in the amplifier circuit.

In addition, the collector-emitter features of the BC869,135 single BJT can be used to regulate the voltage and current of the transistor. When a higher voltage is applied to the emitter, the transistor output current increases. This increase is proportional to the applied voltage, which allows the transistor to be used in voltage-controlled oscillators, automatic gain control circuits and phase-locked loop emulators.

In addition, the BC869,135 single BJT is capable of handling power, so it can be used in power amplifiers. With its large current gain, it can amplify a signal of low power to a much larger level. This feature makes it especially suitable for applications where a high degree of amplification is required.

Conclusion

The BC869,135 single BJT is a popular type of BJT with excellent distortion performance and wide gain bandwidth product. It has low saturation voltage and a wide operating temperature range, making it suitable for applications such as amplifier circuits, voltage-controlled oscillators, automatic gain control circuits, phase-locked loop emulators, linear regulators, and power amplifiers. Its vast array of features and characteristics make it an attractive device for many applications.

The specific data is subject to PDF, and the above content is for reference

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