
Allicdata Part #: | BCP5610TATR-ND |
Manufacturer Part#: |
BCP5610TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 80V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1A 150MHz 2W Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BCP56 |
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The BCP5610TA is a high-performance, low-power NPN Transistor manufactured in a plastic SOT-223 package. The transistor has a voltage of 25V, power dissipation of 500mW and a collector current of 1A. It is an ideal component for applications requiring high-speed switching or amplifying of small-power signals in low-power circuits.
BCP5610TA is a single piece bipolar junction transistor (BJT). It has three terminals, called the emitter, base, and collector. Charge carriers (electrons and electron holes) flow between the emitter and collector contacts, sharing the small region between them called the base. This share of charge carriers from the emitter to the collector defines the current gain of the transistor.
The device is configured in a NPN structure, meaning that the base contact is negative and the collector and emitter are positive. This allows the current to cross in one direction only; electrons to flow from emitter to collector. When the base is not connected, i.e. open circuit, no current flows and the device is in its cut-off mode. When an external voltage is applied (forward biasing) the base-emitter junction and the current starts flowing from emitter to collector.
When the NPN transistor is used as an amplifier, the DC voltage applied to the base controls the current flowing from emitter to collector. This current is then amplified and can be used for applications such as sound amplifiers, noise cancelling systems, etc. The signal is further amplified when used in conjunction with other components. The BCP5610TA is particularly adept for this type of application, as it has very low power consumption.
When the BCP5610TA is used in switching applications, the current flowing from emitter to collector is used to control the device. That is, when the base is triggered (at a certain voltage) the electrons flow through, allowing the current to flow or controlling it. This way the current or voltage can be switched, ideal for applications such as signal routing, relay control, and control of other devices.
To summarise, the BCP5610TA is the perfect component for electronics applications that require switching or amplification of small power signals in low power circuits. Its low power consumption allows for increased efficiency and ruggedness, while its low cost and multiple forms of packaging (SOT-223) make it a popular choice for many applications.
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