BCP53-10T1G Allicdata Electronics
Allicdata Part #:

BCP53-10T1GOSTR-ND

Manufacturer Part#:

BCP53-10T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 1.5A SOT-223
More Detail: Bipolar (BJT) Transistor PNP 80V 1.5A 50MHz 1.5W S...
DataSheet: BCP53-10T1G datasheetBCP53-10T1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.5W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: BCP53
Description

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BCP53-10T1G is a type of Transistor, which belongs to the Bipolar (BJT) – Single family. It is a NPN, small signal transistor which provides low current gain capability due to its relatively low forward current gain (hfe) at a wide range of temperatures. The BCP53-10T1G transistor is used in a variety of applications including, amplifiers, switches and other small signal circuits. It is also used in several industries like automotive, telecommunications, and consumer electronics, just to name a few.

BCP53-10T1G transistor is an NPN transistor. An NPN transistor typically has three layers. The first layer is a base layer which is typically P type material. The second layer is an N type material and acts as the collector. The third layer which is also an N type material, acts as the emitter. The three layers are separated by a thin layer of semiconductor material called the base region. This material has a high electrical resistance and low conduction between the base and the collector. The current flow from collector to emitter is controlled by the amount of current in the base layer. The more current present in the base layer the more current that flows through the NPN transistor.

The working principle of a BCP53-10T1G transistor is based on the principle of current gain. It has a multiplier effect on current, which increases its capacity to amplify the signal. It can be used to switch an electrical signal on and off in a circuit. To use this transistor, the input signal needs to be positive, or the current needs to be applied as it is in an NPN transistor. When the base of the transistor receives a positive voltage, the electrons in the base region are attracted to the collector region. This causes more electrons to flow from the collector to the emitter, thereby increasing the total current flow from the collector to the emitter. When the base voltage is negative, then the electrons in the base region do not cross the collector region. This causes the current to flow from the emitter to the collector, thereby decreasing the current flow from the collector to the emitter. This enables the transistor to switch signals on and off.

BCP53-10T1G transistors are widely used for amplification of low level signals like audio input signals. They are also used for switching applications like motor control circuits and low power digital circuitry. They are also used in power control circuits, as they allow for precise and fast switching of higher voltages and currents. They can also be used to control switching in lighting circuits and other types of household appliances. The BCP53-10T1G transistors are also used in the field of communications, such as wireless and telephone systems, where they are used to amplify or switch signals.

In summary, BCP53-10T1G Transistors are a type of NPN transistor that operates on the principle of current gain. Its base layer receives an input signal, that can range from positive to negative, for which it responds by either increasing or decreasing the current flow from collector to emitter. This switching ability makes this transistor suitable for amplifying low voltage signals, controlling power and switching in lighting and other appliances, and data transmission in communications systems.

The specific data is subject to PDF, and the above content is for reference

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