BCP52-10,135

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A bipolar junction transistor, abbreviated as BJT, is a solid-state current-controlled device that uses two ohmic contacts, called the base and collector, which are sandwiching a semiconductor material, known as the emitter. The BCP52-10,135 is a single-transistor device that is commonly used in power amplification circuits. Its typical applications range from digital switching and audio signals processors, to personal electronic devices and wireless communication.

The BCP52-10,135 is a NPN BJT-type transistor making use of a polysilicon structure. The typical forward current gain (beta) is 10 while the voltage on the collector-emitter (V_CE) is rated at 135 volts. The maximum current rating is 10 A, with the power dissipation of 2.0 W at 25 °C. It also has a collector-base voltage of 200 V and an emitter-base voltage of 5 V.

The electrical properties of the BCP52-10,135 involve current conduction between collector and emitter. Depending on the applied voltage across its PN junction, current can be conducted from the collector to the emitter or from the emitter to the collector. When base current is sufficiently large, the bipolar junction transistor allows current flow in the collector-emitter direction, and it is said to be in forward active mode. This occurs when the base collector junction is forward biased and the emitter is reverse biased.

The BCP52-10,135 can be used in low and high frequency applications, and its most common use is in the audio and video signal processing applications. It can be used in telecommunication equipment, like radios and modems, as well as in electronic instruments such as amplifiers and oscilloscopes. It is also used in consumer electronics products such as personal computers, portable, and home theatre audio equipment.

The working principle of the BCP52-10,135 is based on the semiconductor junction behavior. When a small base current is injected into the device, the application of a reverse bias to the base-to-emitter junction creates a potential barrier across which minority carriers must be injected. The base junction of the NPN transistor is p-type material and the collector junction is n-type material, and the electron injection happens across the base-to-emitter junction. This process creates an inverted stage that amplifies the current gain.

When the emitter-to-base junction is forward biased, conduction takes place and the junction acts as a rectifying diode. The depletion layers of the diode act as a depletion region, thereby allowing controlled current conduction between collector and emitter. The current gain of the BCP52-10,135 is obtained by modulating the width of the depletion layer. This can be done by varying the small base current.

Multiple models of the BCP52-10,135 differ in their specifications and can be used depending on the output application requirements. They differ in their operating voltage ranges, power dissipation, gain, and current conduction ratings. For higher gains, higher current conduction rates, or higher power dissipation, different models must be used.

In summary, the BCP52-10,135 is a single-transistor device that is commonly used in power amplification circuits. It has a typical forward current gain of 10 and a voltage rating of 135 volts. Its typical applications include digital switching, audio signals processors, personal electronic devices, and wireless communication. The working principle of this device is based on the semiconductor junction behavior, where a small base current is injected into the device and the emitter-to-base junction is forward biased to allow conduction. Multiple models of this transistor are available depending on the output applications.

The specific data is subject to PDF, and the above content is for reference