Allicdata Part #: | BCP51E6327HTSA1TR-ND |
Manufacturer Part#: |
BCP51E6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 45V 1A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 1A 125MHz 2W Surf... |
DataSheet: | BCP51E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 125MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BCP51 |
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(BCP51E6327HTSA1 application field and working principle)
BCP51E6327HTSA1 is a model of single bipolar junction transistors (BJT). A single BJT is an active semiconductor that is composed of two pn junctions and three terminals. Generally, the two pn junctions are negative-positive-negative (NPN) or positive-negative-positive (PNP), or alternating ones between the same pn junction. This model, BCP51E6327HTSA1, is an NPN-type BJT, which is most common among single BJT.
The primary application field of BCP51E6327HTSA1 is general purpose amplification and switching. This BJT has many other usage, such as; interfacing. Different BJT’s have different limiting parameters like they are limited by current and temperature. Also, it offers high gain and current, medium base to collector breakdown voltage, medium collector to emitter breakdown voltage, and high junction reverse voltage.
Working Principle of BCP51E6327HTSA1
The BCP51E6327HTSA1 operates based on basic BJT working principle of ‘Current amplification’. In this working principal, the bipolar junction transistors allow current flow from the collector to the emitter, when the base voltage is made positive relative to the emitter. This is possible through the presence of a base-emitter junction, between the collector and the emitter. This junction has two mutually exclusive regions, known as p-type and n-type, of the semiconductor material. The electric current flows through the p-type region in one direction, and through the n-type region opposite. The arrows indicate the direction of electron flow.
When a small electric current flows into the base, it acts as a controlling element. This controls the current of electric carriers which can flow between collector and emitter. The base p-n junction diode has a high impedance, which reduces the electric current that flows through it. This biasing reduces the voltage current of electric carriers and increases the current amplification. The output of the BJT is taken from the collector current.
Connection Terminal
BCP51E6327HTSA1 has three connection terminals; Base, Emitter, and Collector. The Base terminal (B) is connected to the common ground of the BJT, which acts as a gate for electrons throughout the transistor. Current flows from the base to the emitter and then further to the collector. The voltage potential between these three points generally changes depending upon the input signal. This alters the current flow path. The configuration of the three terminals is such that, if a voltage is applied to the base terminal, current will flow from collector to emitter.
Conclusion
The BCP51E6327HTSA1 is a single bipolar junction transistor that is primarily used for general purpose amplification and switching. Its working principle is based on current amplification, which controls the current of electric carriers that can flow between collector and emitter. It has three terminals; base, emitter, and collector. Thus, the BCP51E6327HTSA1 enables electronic switching and amplification with high gain and current, medium base to collector breakdown voltage, and high junction reverse voltage.
The specific data is subject to PDF, and the above content is for reference
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