BCR08PNB6327XT

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BCR08PNB6327XT is a Transistor Array designed to replace standard discrete devices in a wide range of High Voltage/High Current applications. It employs eight N-Channel Enhancement Mode MOSFETs arranged in a single-package monolithic array. The array is well suited for high-reliability circuits having minimal board space requirements. It is a Pre-Biased type of transistor array whose characteristic features such as low-noise, high gain, high frequency response, and excellent power handling capabilities make it a suitable choice for medium-voltage applications.

BCR08PNB6327XT’s application field includes controlling high-power loads such as DC Motors, Light Emitting Diode (LED) lighting fixtures, Mosfet/IGBT Gate Drivers, stationary power supply systems, power converters and more. It is typically used in consumer electronics, industrial equipment, automotive and other medium-voltage applications.

The BCR08PNB6327XT is typically supplied in the “pre-biased” configuration. This type of configuration involves the use of an internal resistor between the source-drain connections of each transistor. The resistor is set typically to a few ohms, enabling the transistor to be in an active state even when no microcontroller is controlling the gate voltage. This effectively eliminates the need for separate current-limit and temperature-limit circuits in the application.

The array is configured in the "Half-Bridge" configuration which is characterized by two complimentary transistors that handle the switching functions for two-way power transfer. The array has an open-drain configuration which helps reduce power consumption and extends system lifetime. The internal IRF7805 and IRF950 are used to drive the ports of the array and act as level translators for the NMOS transistors.

The working principle of the BCR08PNB6327XT is based on the concept of “Voltage-Controlled Current Source” (VCCS). The VCCS is a type of switching circuit which uses the gate voltage of an MOSFET to control the current through the Drain-Source terminals of the MOSFET. The basic idea is that when the gate voltage is increased, the MOSFET’s Drain-Source current increases and vice versa. The VCCS is used to drive high-current loads while keeping the Total Harmonic Distortion (THD) to a minimum.

The VCCS adapts the common resistor and MOSFET load driving model to allow better noise performance and power efficiency in applications. This is accomplished by using an adaptive voltage divider in place of the resistor and controlling the division ratio with the gate voltage of the MOSFET. This adaptive voltage divider is optimized to match the voltage drop across the MOSFET according to the required current through the load.

In order to achieve the optimal performance from BCR08PNB6327XT, the user needs to correctly configure the resistor/capacitor network connected to the array. The network is used to filter out any high-frequency noises generated by the activation or deactivation of the transistors. The filter comprises of two resistors and two capacitors with the values of R1, R2, C1 and C2 optimized according to the application specifications.

BCR08PNB6327XT is capable of handling heavy loads with its robust power handling capabilities. Its high frequency response combined with low noise operation makes it a suitable choice for medium voltage applications. Its integrated level translators allow for easy control over the gate voltage. The array is perfect for applications such as controlling high-power loads, LED lighting fixtures, and Mosfet/IGBT Gate Drivers.

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