BCR183SH6433XTMA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	200MHz
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-6

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Introduction

BCR183SH6433XTMA1 is a Bipolar Junction Transistor (BJT) pre-biased array. This type of transistor array contains a number of transistors in a single package, pre-biased and ready to use. The BCR183SH6433XTMA1 has 64 transistors in total with 33 transistors on each side. Each transistor is optimized to operate over a wide range of frequencies and to provide very high current gain (typically between 100 and 1000).

Application Field

The BCR183SH6433XTMA1 is a popular choice for different types of applications such as high-speed digital circuits, static power supplies, motor drives, switched-mode converters and circuits requiring high level of reliability. This type of transistor array is also used in operations such as frequency converters and pulse width modulation (PWM) circuits.The ease of use, low cost and high current gain of the BCR183SH6433XTMA1 makes it an ideal choice for applications that require multiple transistors in one package. These transistors can be used to drive loads up to a few amp and are suitable for switching, amplification and low-noise applications.

Working Principle

The BCR183SH6433XTMA1 works by allowing for current to pass through the transistors in a “transistor chain”. The basic setup of the chain consists of a positive and a negative output. When a positive input is applied, current will flow through the BCR183SH6433XTMA1 and the transistor chain.The BCR183SH6433XTMA1 is designed to reduce thermal runaway and power dissipation. This is achieved by its architecture of cascading bipolar transistors with increasing current gain as the voltage bias is increased. This allows the BCR183SH6433XTMA1 to operate over a wide temperature range without significant variations in the current gain.

Other Features

In addition to the application fields mentioned above, the BCR183SH6433XTMA1 is also well suited for applications involving high-speed data processing and systems requiring low noise. This type of transistor array is also capable of operating directly at logic level without the need for external level shifters. This makes it ideal for applications such as driving between high voltage and low voltage circuits.In terms of its packaging, the BCR183SH6433XTMA1 is available in a variety of form factors including metal-oxide-semiconductor (MOS), metal-insulator-semiconductor (MIS), ball grid array (BGA) and dual-in-line packages (DIP). The DIP package is the most common and provides the greatest number of transistors in one package.

Conclusion

The BCR183SH6433XTMA1 is an ideal choice for a wide range of applications. It provides excellent current gain and low power consumption, as well as a wide operating temperature range. The pre-biased nature of the BCR183SH6433XTMA1 simplifies the design process, while its robust packaging allows it to be used in a variety of form factors. With its advanced features, it is no wonder that the BCR183SH6433XTMA1 is becoming an increasingly popular choice for digital and power circuits.

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