BCR48PNE6327BTSA1 Allicdata Electronics
Allicdata Part #:

BCR48PNE6327BTSA1TR-ND

Manufacturer Part#:

BCR48PNE6327BTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN/PNP PREBIAS SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: BCR48PNE6327BTSA1 datasheetBCR48PNE6327BTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Base Part Number: BCR48PN
Supplier Device Package: PG-SOT363-6
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 100MHz, 200MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms, 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 70mA, 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BCR48PNE6327BTSA1 is a type of transistor classified under transistors – bipolar (BJT) – arrays, pre-biased. A transistor is an electronic device mainly used for amplification and switching, having two terminals for input and two for output. The BCR48PNE6327BTSA1 is a three-terminal bipolar transistor array that can be used to provide an initial bias voltage while allowing power supply voltage changes and environmental temperature changes with minimal loss of control current. It can be used in advanced and fast switching applications with input capacitor and output load capacitive switching.

The three pins of this device provide a number of connections to either side of the emitter-base junctions, enabling the construction of complex logic circuits. It is ideal for a range of applications, such as logic-level switches and audio amplifiers. By allowing faster switching and a narrow range of operating ranges, it helps reduce total power consumption and provides increased system stability.

The BCR48PNE6327BTSA1 consists of three NPN-type transistors with individual base-emitter junctions, a common emitter connection and a common base connection. Its maximum collector-emitter voltage rating is 0.4 V with a maximum collector current of 1.8 A. Its maximum power dissipation is 4.5 mW per transistor. The small form factor of this transistor means that it can be integrated into large-scale projects without impacting platform space.

The working principle by which the BCR48PNE6327BTSA1 operates is simple. Through the application of a voltage to the common base connection, the device will switch from zero to its normal operating state. The input voltage applied to the base must be higher than the maximum collector-emitter voltage. When this voltage is applied, an electric field is created between the base and the emitter, causing the current to flow through the device. This current will then cause a voltage drop on the collector which will act as the output voltage for the circuit.

The BCR48PNE6327BTSA1 is an invaluable device capable of handling a range of applications. It is compatible with many power supply voltages and features low power dissipation. The small form factor and three pins enable the integration of a combination of logic switches, amplifiers and power regulation schemes. With its pre-biased terminals, the device can be used to provide an initial bias voltage while maintaining efficiency even when temperatures or power supply voltages fluctuate.

The specific data is subject to PDF, and the above content is for reference

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