| Allicdata Part #: | BCR48PNE6327BTSA1TR-ND |
| Manufacturer Part#: |
BCR48PNE6327BTSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANS NPN/PNP PREBIAS SOT363 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: | BCR48PNE6327BTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
| Base Part Number: | BCR48PN |
| Supplier Device Package: | PG-SOT363-6 |
| Package / Case: | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type: | Surface Mount |
| Power - Max: | 250mW |
| Frequency - Transition: | 100MHz, 200MHz |
| Current - Collector Cutoff (Max): | -- |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 47 kOhms, 2.2 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 70mA, 100mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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BCR48PNE6327BTSA1 is a type of transistor classified under transistors – bipolar (BJT) – arrays, pre-biased. A transistor is an electronic device mainly used for amplification and switching, having two terminals for input and two for output. The BCR48PNE6327BTSA1 is a three-terminal bipolar transistor array that can be used to provide an initial bias voltage while allowing power supply voltage changes and environmental temperature changes with minimal loss of control current. It can be used in advanced and fast switching applications with input capacitor and output load capacitive switching.
The three pins of this device provide a number of connections to either side of the emitter-base junctions, enabling the construction of complex logic circuits. It is ideal for a range of applications, such as logic-level switches and audio amplifiers. By allowing faster switching and a narrow range of operating ranges, it helps reduce total power consumption and provides increased system stability.
The BCR48PNE6327BTSA1 consists of three NPN-type transistors with individual base-emitter junctions, a common emitter connection and a common base connection. Its maximum collector-emitter voltage rating is 0.4 V with a maximum collector current of 1.8 A. Its maximum power dissipation is 4.5 mW per transistor. The small form factor of this transistor means that it can be integrated into large-scale projects without impacting platform space.
The working principle by which the BCR48PNE6327BTSA1 operates is simple. Through the application of a voltage to the common base connection, the device will switch from zero to its normal operating state. The input voltage applied to the base must be higher than the maximum collector-emitter voltage. When this voltage is applied, an electric field is created between the base and the emitter, causing the current to flow through the device. This current will then cause a voltage drop on the collector which will act as the output voltage for the circuit.
The BCR48PNE6327BTSA1 is an invaluable device capable of handling a range of applications. It is compatible with many power supply voltages and features low power dissipation. The small form factor and three pins enable the integration of a combination of logic switches, amplifiers and power regulation schemes. With its pre-biased terminals, the device can be used to provide an initial bias voltage while maintaining efficiency even when temperatures or power supply voltages fluctuate.
The specific data is subject to PDF, and the above content is for reference
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BCR48PNE6327BTSA1 Datasheet/PDF