Allicdata Part #: | BCV47E6327HTSA1TR-ND |
Manufacturer Part#: |
BCV47E6327HTSA1 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN DARL 60V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 60V 500m... |
DataSheet: | BCV47E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03804 |
6000 +: | $ 0.03308 |
15000 +: | $ 0.02812 |
30000 +: | $ 0.02646 |
75000 +: | $ 0.02481 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 360mW |
Frequency - Transition: | 170MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BCV47 |
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The BCV47E6327HTSA1, classified as a Transistor - Bipolar (BJT) - Single, is an NPN transistor that is commonly used for amplifying current and switching applications. This type of transistor has a wide variety of applications and provides an efficient way to control and manage current in electrical circuits.
The BCV47E6327HTSA1 is designed with three terminals, with two of the terminals being the collector and the emitter and the third being the base. At the collector, it can collect and pass on current that runs from the emitter. The base terminal is what gives this type of transistor its control characteristics, as it is able to control the flow of current between the collector and emitter and ensure that it remains consistent.
The BCV47E6327HTSA1 uses a forward current gain, (commonly referred to as hFE) to allow the transistor to operate effectively and efficiently. The hFE of the BCV47E6327HTSA1 is 280. This hFE rating allows the transistor to efficiently switch and amplify large signals while maintaining accurate current flow.
Another factor that allows the BCV47E6327HTSA1 to function as an amplifier is its minimum current gain, referred to as hFEmin. The hFEmin of the BCV47E6327HTSA1 is 120, which provides the transistor capable of amplifying and switching small signals.
The operating temperature range of the BCV47E6327HTSA1 is -65° to +170°C, allowing for reliable operation in a wide range of environmental conditions. Additionally, its low power consumption allows for the device to be used in both mobile and static applications.
In terms of its application field, the BCV47E6327HTSA1 can be used in a wide variety of projects, such as amplifiers, switching circuits, current sensing and control applications, digital circuits, battery protection circuits, motor control circuits and surge protection devices. It is also important to note that this device can be used in both linear and digital applications, making it a versatile and flexible device.
The working principle of the BCV47E6327HTSA1 is relatively simple. When current is applied to the base terminal, it will lower the resistance between the collector and emitter, allowing current to flow between the two. This current flow can then be controlled, regulated and managed to provide the desired results.
The BCV47E6327HTSA1 is an effective, efficient and versatile transistor that can be used for a variety of projects and applications. By taking advantage of its hFE and hFEmin ratings, it can be used to amplify and switch signals of varying strength, allowing for precision and accuracy in current control.
The specific data is subject to PDF, and the above content is for reference
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