BCV47TA Discrete Semiconductor Products |
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Allicdata Part #: | BCV47TR-ND |
Manufacturer Part#: |
BCV47TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN DARL 60V 0.5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 60V 500m... |
DataSheet: | BCV47TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 330mW |
Frequency - Transition: | 170MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BCV47 |
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The BCV47TA is a type of NPN single-transistor bipolar junction transistor (BJT). It is widely used as a switching and amplification device in consumer electronics and industrial applications where switch and small signal amplifications are needed. It has a wide range of applications, such as switching power supplies, industrial control systems, small-signal amplifiers, line-level audio amplifiers, and automotive relay drivers.
The BCV47TA consists of three layers of semiconductor material which form the basis of the BJT. The two outer layers are called the emitter and collector and are made of doped semiconductor materials. The inner level of material is called the base, and it is made of an undoped intrinsic material. This arrangement of layers allows for current flow from the emitter to the collector through the base when a voltage or a small-signal is applied across the transistor.
The working principle of the BCV47TA is based on the formation of a depletion layer between the emitter and collector when a voltage is applied across the emitter-base junction. This negative voltage pushes the majority carriers away from the base of the transistor, and as a result, a narrow zone of negative voltage appears between the collector and the base. This wide depletion region provides a high resistance between the collector and the base, thus inhibiting the flow of current from the collector to the base.
The BCV47TA also has an extremely low saturation voltage, which is a measure of the minimum base current required to switch the transistor on. This allows the transistor to switch low-level signals with a very low power consumption. It also allows for precise control of the signal strength and signal frequency. Additionally, the low base current makes the transistor very suitable for applications which require low-power amplification.
The BCV47TA is also noteworthy due to its extremely high frequency capability. This makes it suitable for applications which require hundreds of megahertz of bandwidth. It also allows the transistor to be used in digital circuits, since it can be used to modulate high-frequency signals with good accuracy. Furthermore, the high frequency capability also makes the BCV47TA suitable for use in wireless communication applications.
Finally, the BCV47TA also has an extremely low thermal resistance, which makes it ideal for use in applications which require high switching speeds. This low thermal resistance also allows the transistor to be used in high-temperature environments where other transistors would be damaged by the heat.
In summary, the BCV47TA is a versatile single-transistor bipolar junction transistor with favorable characteristics and a wide range of applications. It has a wide voltage and frequency range and it offers low power consumption, a high switching speed and a highly durable performance. It is, therefore, an excellent choice for a wide variety of applications in the consumer electronics and industrial fields.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BCV49TA | Diodes Incor... | -- | 1000 | TRANS NPN DARL 60V 0.5A S... |
BCV48E6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | TRANS PNP DARL 60V 0.5A S... |
BCV47E6327HTSA1 | Infineon Tec... | 0.04 $ | 1000 | TRANS NPN DARL 60V 0.5A S... |
BCV47TA | Diodes Incor... | -- | 1000 | TRANS NPN DARL 60V 0.5A S... |
BCV47,235 | Nexperia USA... | 0.05 $ | 1000 | TRANS NPN DARL 60V 0.5A S... |
BCV47,215 | Nexperia USA... | 0.06 $ | 1000 | TRANS NPN DARL 60V 0.5A S... |
BCV46TC | Diodes Incor... | 0.0 $ | 1000 | TRANS PNP DARL 60V 0.5A S... |
BCV49E6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | TRANS NPN DARL 60V 0.5A S... |
BCV49,115 | Nexperia USA... | 0.1 $ | 1000 | TRANS NPN DARL 60V 0.5A S... |
BCV46TA | Diodes Incor... | 0.1 $ | 1000 | TRANS PNP DARL 60V 0.5A S... |
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