BCV49H6327XTSA1

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	10000 @ 100mA, 5V
Power - Max:	1W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

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Transistors are electronic components used to amplify and switch electrical signals. The BCV49H6327XTSA1 is a type of bipolar junction transistor (BJT) specifically designed for application in automotive intelligence transmission systems. It is a single-stage, normally-off, N-channel low side power field-effect transistor (FET). In automotive applications, it is especially suitable for solving situations where noisy communications affect data transmission quality. In this article, we\'ll discuss the application field and working principle of the BCV49H6327XTSA1.

Application Field of BCV49H6327XTSA1

The BCV49H6327XTSA1 is a high performance, logic level, N-channel power FET with a very low gate charge and high mobility. It is suitable for a wide range of automotive intelligence transmission applications such as, engine control units and airbag systems. This power FET is also a great choice for industrial motor control circuits, switching and motor drivers, and other power supply circuits.

Working Principle of BCV49H6327XTSA1

The BCV49H6327XTSA1 is a type of bipolar junction transistor (BJT) specifically designed for application in automotive intelligence transmission systems. It works as a normally-off, N-channel low side power field-effect transistor (FET), which is suitable for noisy communication situations. The BCV49H6327XTSA1 works by combining two p-type semiconductor materials and two n-type semiconductor materials. The two p-type material forms a P-channel and the two n-type materials form an N-channel. By applying a voltage between the gate and the source of the transistor, the resistance between the drain and the source is increased and a current begins to flow. Similarly, by reducing the voltage between the gate and the source, the resistance between the drain and the source is decreased and the current stops flowing. This is how the BCV49H6327XTSA1 amplifies and switches the signal.

Conclusion

The BCV49H6327XTSA1 is a type of bipolar junction transistor (BJT) that is specifically designed for applications in automotive intelligence transmission systems. It is a single-stage, normally-off, N-channel low side power field-effect transistor (FET). It is suitable for a wide range of automotive intelligence transmission applications such as, engine control units and airbag systems, as well as industrial motor control circuits, switching and motor drivers, and other power supply circuits. The BCV49H6327XTSA1 works by combining two p-type semiconductor materials and two n-type semiconductor materials to amplify and switch electrical signals.

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