Allicdata Part #: | 1727-1578-1-ND |
Manufacturer Part#: |
BCW71,215 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN 45V 0.1A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250m... |
DataSheet: | BCW71,215 Datasheet/PDF |
Quantity: | 1241 |
1 +: | $ 0.17640 |
10 +: | $ 0.14364 |
100 +: | $ 0.07610 |
500 +: | $ 0.05009 |
1000 +: | $ 0.03406 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 210mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 2mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
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Bipolar junction transistors (BJTs) are devices that have three terminals and allow current flow in two directions. They are generally used as analog amplifiers, switches, buffers and digital logic elements, and are available in a variety of designations, sizes, configurations and packages. The BCW71,215 transistor is a single BJT, but is particularly versatile due to its ability to handle various power, frequency and temperature conditions. In this article, we will discuss the application field and working principle of the BCW71,215 transistor.
Application Fields
The BCW71,215 transistor is typically used in low-noise amplifiers for RF applications as it provides minimal noise and distortion. It can also be used in switching processes and for load switching, as well as for voltage control. Because it is so versatile, it has a wide range of applications in various industries, such as automotive, military and communication systems, precision measurement instruments, as well as consumer electronic equipment, including audio amplifiers and RF radio sets.
Working Principle
The BCW71,215 transistor has two p-n junction regions between its three terminals, known as base, collector and emitter. When voltage is applied to the base-emitter junction, electrons and holes recombine and current can flow in either direction across the junction. This phenomenon, known as bi-polar junction action, enables the transistor to act as a switch, and depending on the voltage applied to the base, the behaviour of the transistor is determined.
In the typical circuit, the base of the transistor acts as a control gate with current flowing from the emitter to the collector controlled by the current flowing through the base. In this configuration, the transistor is used as an amplifier; a small change in base bias current can result in a large change in collector current. When the transistor is operated in the active mode, it behaves as a current amplifier, providing an amplification of current between the emitter and collector. In the saturated mode, the current flowing through the transistor is maximized, allowing it to behave as a switch, providing full on or off switching.
The BCW71,215 transistor is also designed to be able to handle high power, frequency and temperature conditions. It has a wide frequency range and has the ability to dissipate up to 25 watts of heat. Additionally, it can handle temperatures ranging from -55°C to 150°C, making it a suitable choice for applications in extreme temperature environments.
Conclusion
In conclusion, the BCW71,215 transistor is an ideal choice for applications that require low-noise performance, high power and frequency handling and temperature range capability. It is a versatile device that can be used for amplifying signals, as well as for switching, and load-switching purposes, making it suitable for a variety of applications in different industries.
The specific data is subject to PDF, and the above content is for reference
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