BCW72,235

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	210mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	250mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BCW72

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BCW72,235 Application Field and Working Principle

The BCW72,235B is a silicon PNP transistor designed for use in audio power amplifier frequency multipliers. It is one of the most common transistors used in a variety of electronic projects, particularly those related to audio technology. This transistor has a relatively low voltage drop with maximum continuous collector current of 15A and maximum peak collector current of 24 A. It can enable an output up to 100 watts.

Application:

BCW72,235B transistors offer a wide variety of applications. In audio amplifier projects, this transistor is used to produce a higher voltage output with a lower amount of current consumption. It is also suitable for switching applications such as motor control, and can be used in motor drivers, DC-DC converters, audio amplifiers and other switching circuits.

Working Principle:

A BCW72,235B transistor is a silicon PNP bipolar junction transistor (BJT), which is a type of transistor that is formed by two junctions between a semiconductor material. The two junctions, known as the emitter and the base, are separated by an extremely thin layer of an insulating material.When the transistor is in its active state, current will flow to the base from the emitter. This current is then amplified and passed from the collector to the base. The amount of current that is amplified is determined by the current gain of the transistor, which is typically denoted by hfe (or beta). The BCW72,235B has an hfe of 130.The voltage drop across the BCW72,235B is relatively low, with a maximum continuous collector current of 15A and maximum peak collector current of 24 A. The transistor has a maximum power dissipation of 100W and can therefore be used in watt-level audio amplifier projects.

Summary:

The BCW72,235B is a silicon PNP bipolar junction transistor (BJT) designed for use in audio power amplifiers and frequency multipliers. This transistor is suitable for applications such as motor control, audio amplification and other switching circuits. The BCW72,235B has a relatively low voltage drop with maximum continuous collector current of 15A and maximum peak collector current of 24 A and a current gain of hfe 130. The maximum power dissipation of this transistor is 100W, making it suitable for watt-level audio amplifier projects.

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