BCX5216E6433HTMA1 Allicdata Electronics
Allicdata Part #:

BCX5216E6433HTMA1TR-ND

Manufacturer Part#:

BCX5216E6433HTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 60V 1A SOT-89
More Detail: Bipolar (BJT) Transistor PNP 60V 1A 125MHz 2W Surf...
DataSheet: BCX5216E6433HTMA1 datasheetBCX5216E6433HTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89
Base Part Number: BCX52
Description

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The BCX5216E6433HTMA1 is considered a single bipolar junction transistor (BJT) device. It is primarily used for digital signal amplifier applications and is tuned for better linearity and improved harmonic performance. The BCX5216E6433HTMA1 has higher power dissipation than standard BJT devices and is ideal for high-voltage and high-current applications, such as digital signal processing systems and audio amplifiers.

The BCX5216E6433HTMA1 is constructed with a layer-stacked semiconductor structure that allows it to operate at higher voltages, making it more suitable for digital signal processing applications. The device has an N-channel enhancement mode that increases its cutoff voltage. This makes it ideal for applications that require wide operating range, such as audio amplifiers and switching power supplies.

The BCX5216E6433HTMA1 also features a fast switching speed that helps reduce the power dissipation of the device. It has an improved linearity and low-power operation for better performance and energy efficiency. The device is designed to reduce EMI and reduce power consumption in high-speed operation, making it ideal for sophisticated digital signal processing applications.

The BCX5216E6433HTMA1 works by using a single junction to control the current flow between two electrodes, the emitter and base. The base and emitter electrodes are separated by a thin layer of silicon and one or more layers of a semiconductor, known as the base junction. The emitter current is controlled by the base voltage, which is used to control the operation of the device. When the base voltage is applied, the base-emitter current increases and the base junction reduces the resistance and this increases the current flow through the device. This process can be used to amplify an input signal.

The BCX5216E6433HTMA1 is a power transistor that has been optimized specifically for increased gain linearity and improved harmonic performance. The device is used in digital signal processing applications such as audio amplifiers, switching power supplies, and wireless communications systems that require wide operating range and fast switching speed.

The BCX5216E6433HTMA1 provides a higher power dissipation to reduce power consumption and improved harmonic performance. It is suitable for applications where high voltage and high current are required and also has improved linearity and low power operation. The BCX5216E6433HTMA1 is ideal for use in sophisticated digital signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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