Allicdata Part #: | BCX5310H6327XTSA1-ND |
Manufacturer Part#: |
BCX5310H6327XTSA1 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR AF SOT89-4 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 125MHz 2W Surf... |
DataSheet: | BCX5310H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
7000 +: | $ 0.06890 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 125MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PG-SOT89 |
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The BCX5310H6327XTSA1 is a type of single bipolar junction transistor (BJT), which is constructed as a three-terminal device with two p-n junctions. It is an NPN silicon transistor featuring an epitaxial base, a silicon NPN transistor, and a PNP silicon transistor. Its specifications include a collector-emitter voltage of 40V, a collector current of 3A, and a power dissipation of 28W.
This transistor is often used in amplifier circuits, such as audio amplifiers and radio frequency (RF) amplifiers. It is particularly designed for amplifiers that require large bandwidths and high gain, due to its wide frequency range and high gain characteristics. In addition, its low voltage operation makes it suitable for battery- operated applications.
Its most common application includes amplifying low level signals, such as audio signals, to make them audible or visible. Its other applications include switching, current regulation, and frequency control. It is also used as a power supply switch, in order to turn on and off other components within a circuit.
The working principle behind the BCX5310H6327XTSA1 transistor is that it is able to control the current between its collector and emitter. In the active region the transistor may be in either the cut-off or the saturation region. In the cut-off region, no current is flowing between the collector and emitter, and the transistor acts like an open switch. In the saturation region, the current flowing between the collector and emitter is controlled by the base current and the transistor acts like a closed switch. The state of the transistor can be changed by changing the base current.
The transistor is composed of two main components, the emitter and the base. The emitter is the source of majority carriers, while the base is the region of minority carriers. In a BJT, the base-emitter junction acts as a diode and allows current to flow in the forward direction. When a small amount of current is applied to the base, the amount of current flowing in the collector and emitter increases significantly, resulting in an amplification of the input signal.
The BCX5310H6327XTSA1 transistor has a wide range of applications, due to its high current capacity and its ability to switch signals quickly. It is an important component in many circuit designs, such as RF amplifiers, current regulation, and audio amplifiers. As it is able to switch on and off faster than other types of transistors, it is often used as an on-off switch in power supply circuits.
The specific data is subject to PDF, and the above content is for reference
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