BCX53-10,135 Allicdata Electronics
Allicdata Part #:

BCX53-10,135-ND

Manufacturer Part#:

BCX53-10,135

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 80V 1A SOT89
More Detail: Bipolar (BJT) Transistor PNP 80V 1A 145MHz 1.3W Su...
DataSheet: BCX53-10,135 datasheetBCX53-10,135 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.05954
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.3W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BCX53
Description

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BCX53-10,135 is one type of general purpose transistors which belong to Bipolar Junction Transistors (BJT) Single. It was made by STMicroelectronics but have since been discontinued. It was available in 2-pin TO-126 package.

A Bipolar Junction Transistor (BJT) is an electronic device constructed of three layers of semiconductor material. It consist of an Emitter, Base and Collector connected together in order to allow DC and AC current to flow between them. It has two main injection regions called Emitter and Base and two terminals which are connected to the Collector and Emitter. It can be used in amplification and switching applications because of the current flow from collector to emitter and the switching is controlled by the Base current.

The BCX53-10,135 has a DC current gain between 10 and 135, meaning that it allows a low Base current to control a higher Collector current (amplification). This device can be used in amplifier or switching applications, such as in signal amplifiers, transistor radios, digital logic, power supply circuits and signal switching.

The BCX53-10,135 is a NPN type transistor which means that the Base region is negative relative to the Emitter region. So, the current flows from the Emitter to the Base and then to the Collector. The Collector needs to be connected to a positive power source and the Emitter needs to be connected to the grounded power source. The Base current flows from the positive power source to the Emitter via the Base-Emitter junction.

The working principle of the BCX53-10,135 is that the current flow from the Emitter to the Base (when its Base-Emitter junction is closed) increases the number of charge carriers in the Base region. This makes the Base more conductive, resulting in an increased Collector current flow from the Base region to the Collector. The rise of the voltage on the Base-Emitter junction is what controls the amount of current flowing from the Collector. By increasing or decreasing the applied voltage, the current flow can be increased or decreased accordingly.

The advantage of the BCX53-10,135 is its wide current gain range (10-135). Compared to other transistors, this device can handle greater base currents, making it an ideal choice for high power applications. Additionally, the BCX53-10,135 can be used as a switch for controlling higher power devices, as it is able to handle higher Collector currents than most transistors. Further, its small size makes it easy to integrate into any circuit.

In conclusion, the BCX53-10,135 is an excellent choice for power amplification and switching applications because of its wide current gain and small size. With its wide current gain range, it can be used to control high power devices easily. Furthermore, its small size makes it ideal for integrating into any circuit. With its reliable performance, the BCX53-10,135 is a great choice for many power applications.

The specific data is subject to PDF, and the above content is for reference

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