Allicdata Part #: | BCX599_D26Z-ND |
Manufacturer Part#: |
BCX599_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN Through Hole TO-9... |
DataSheet: | BCX599_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BCX599 |
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BCX599_D26Z is a single bipolar transistor (BJT) manufactured by NXP for use in small-signal discrete amplification and switching applications. It is a general-purpose switching device ideal for low current operation and can be used in a variety of wireless and electronic systems.
Features of BCX599_D26Z
BCX599_D26Z offers several features that make it an ideal choice for transistors:
- Low collector-emitter saturation voltage (VCES8).
- High gain bandwidth product (hfe).
- High DC current gain (hFE).
- Low collector-emitter leakage current (Ices).
- Operating junction temperature range of -65°C to +125°C.
Applications of BCX599_D26Z
BCX599_D26Z is suitable for use in a variety of applications, including:
- Switching power supplies.
- Digital-to-analog conversion (DAC) circuits.
- Analog watt-hour meter circuits.
- On/off switching circuits.
- RF and microwave circuits.
- High/low-side switching circuits.
- AFS circuits.
Working Principle of BCX599_D26Z
BCX599_D26Z can be used in two basic configurations: the common-base configuration and the common-emitter configuration. When the base-emitter voltage (Vbe) is in forward-bias, the current from the base to the emitter increases. The increase in current causes the collector current (Ic) to also increase, thus providing amplification when operated in common-emitter configuration. High gain is achieved when the collector current (Ic) and base current (Ib) are similar in magnitude. When the base-emitter voltage (Vbe) is in reverse-bias, the current through the base-emitter junction is reduced, thus providing switching action.
It is important to note that the saturation voltage (Vce) of the transistor is also affected by the collector current (Ic) and the base-emitter voltage (Vbe). When Vbe is at its minimum and Ic is at its maximum, the Vce will have its minimum voltage and vice versa. Therefore, it is important to ensure Vbe and Ic are appropriate for the desired Vce when the transistor is operated in either the common-base or common-emitter configuration.
Conclusion
BCX599_D26Z is a single bipolar transistor optimized for switching and amplification applications. It offers excellent performance over an extended temperature range, making it ideal for use in a variety of wireless and electronic systems. Its ability to provide high gain bandwidth product (hfe), low saturation voltage (VCES8), and high DC current gain (hFE) make it a versatile device ideal for low current operation.
The specific data is subject to PDF, and the above content is for reference
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