Allicdata Part #: | BCX53E6327HTSA1TR-ND |
Manufacturer Part#: |
BCX53E6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 80V 1A SOT-89 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 125MHz 2W Surf... |
DataSheet: | BCX53E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 125MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PG-SOT89 |
Base Part Number: | BCX53 |
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Transistors - Bipolar (BJT) - Single
BCX53E6327HTSA1 is a widely used single bipolar junction transistor (BJT) with a high ranges of power dissipation. It has an externe dissipation power (Pd) of up to 625mW and a collector-emitter voltage of up to 200V. It is known for its high performance and reliable operation in various applications.
Applications of BCX53E6327HTSA1
BCX53E6327HTSA1 transistors are mostly used in industry-grade applications such as switching ON and OFF relays, computers, and other automation purposes. It is also one of the most popular BJTs used in high frequency, low voltage designs. Moreover, BCX53E6327HTSA1 has a wide range of applications in the automotive industry and audio amplifiers.
Working Principle of BCX53E6327HTSA1
BCX53E6327HTSA1 works on the principle of minority carrier injection. When voltage is applied to the base-emitter of the BCX53E6327HTSA1, minority carriers are injected from the base to the collector, resulting in current flow from collector to the emitter. This voltage-controlled current flow can be used for amplification purposes. Additionally, the current flow can be regulated or turned off with the change of base voltage.
The operation mechanism of the BCX53E6327HTSA1 works in a simple way and is a key factor in allowing the transistor to be used in high-frequency, low-voltage designs. When voltage is applied to the base-emitter junction and a current begins to flow, a voltage drop appears across the emitter-base and collector-base, forming an input resistance between the base and emitter. This reduces the RC time constant and makes the BCX53E6327HTSA1 suitable for high-frequency applications.
Key Characteristics of the BCX53E6327HTSA1
BCX53E6327HTSA1 is a low-power, single bipolar junction transistor with a power dissipation of up to 625mW and a collector-emitter voltage of up to 200V. It also features a high breakdown voltage of up to 150V and a current gain of up to 200. Additionally, it features a low saturation voltage of 0.25V, a low output capacitance of 0.4pF, and an operating temperature range of -55°C to +150°C.
BCX53E6327HTSA1 transistors are also known for their low noise characteristics and excellent heatsinking capacity. The wide range of physical characteristics, coupled with its reliable operation, makes the BCX53E6327HTSA1 an ideal choice for a large number of applications.
Conclusion
BCX53E6327HTSA1 is a single bipolar junction transistor with a wide range of applications in industries such as automotive, high-frequency, and audio amplifiers. It has a high power dissipation, a reliable performance in the negative temperature range, a wide operating temperature range and a high breakdown voltage. The combination of all of these features makes the BCX53E6327HTSA1 an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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