BCX5516H6433XTMA1 Allicdata Electronics
Allicdata Part #:

BCX5516H6433XTMA1-ND

Manufacturer Part#:

BCX5516H6433XTMA1

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR AF SOT89-4
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 100MHz 2W Surf...
DataSheet: BCX5516H6433XTMA1 datasheetBCX5516H6433XTMA1 Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06890
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89
Description

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Transistors are semiconductors used in a wide array of applications and are found in virtually every piece of modern technology. The BCX5516H6433XTMA1 is an NPN Bipolar Junction Transistor (BJT). These type of transistors are also known as single transistors and are used in a variety of applications, including amplifiers, signal processors, control logic and switching circuits.

The BCX5516H6433XTMA1 is basically a three terminal device, with the terminals being the collector (C), the base (B) and the emitter (E). It has an amplification factor of 3.7, a collector current of 8MA and a power dissipation rating of 400mw. The device operates in two main modes: active and saturation. In active mode, the electric current between the collector and the emitter depends on the voltage applied between the base and the emitter. In saturation mode, the electric current between the collector and the emitter is independent of the voltage applied between the base and the emitter.

The working principle behind the BCX5516H6433XTMA1 is that the current flowing from the collector to the emitter is proportional, or less than, the current flowing from the base to the emitter. This is known as the transistor action, as the current flowing through the base to the emitter controls the amount of current flowing from the collector to the emitter. As such, the current gain of the transistor can be linearly varied with the electrical input on the base.

The application field of the BCX5516H6433XTMA1 is broad and covers many usage scenarios. In analog applications they can be used in amplifiers, voltage regulators, filters and signal processing circuits. In addition, they are utilized in digital and logic applications, such as logic gates, memory elements, flip-flops and counters. As the transistor is available in a compact package, it is also used in portable electronics.

In addition, the BCX5516H6433XTMA1 is used in microwave ovens, switching power supplies and is even found in some high efficiency LED drivers. As the model can support high switching speed and has low saturation voltage, it is ideal for motor and switching applications. The device is also suitable for relay drivers, as well as general purpose switching and low noise amplification applications.

In conclusion, the BCX5516H6433XTMA1 is a high power NPN Bipolar Junction Transistor (BJT) and is used in many different applications. It has an amplification factor of 3.7, a collector current of 8MA and a power dissipation rating of 400mw. The device operates in two main modes: active and saturation, with the current flowing from the collector to the emitter being proportional, or less than, the current flowing from the base to the emitter. This is known as the transistor action and is the basis of this transistors\' working principle. The application field of the BCX5516H6433XTMA1 is broad and covers many usage scenarios, making it a popular choice for anyone looking for a versatile and reliable single transistor.

The specific data is subject to PDF, and the above content is for reference

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