BCX70GE6327HTSA1

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BCX70GE6327HTSA1 is a type of single bipolar junction transistor (BJT). It is a general-purpose low-power NPN epitaxial planar silicon transistor. It is designed for medium speed switching and amplification application.

Features

• Planar Die Construction with Standard Geometry.
• Excellent hFE linearity.
• Low Noise.
• Low Leakage Currents.
• Good Beta Match.
• Compatible with Low Voltage High Current Arrays.

Application Field

BCX70GE6327HTSA1 transistors are ideal for applications in low voltage and high current amplification, switching and interface circuits, such as TV and monitor vertical output stage, multivibrator, amplifier stages, general purpose switching circuits and inverting and non-inverting amplifiers.

Working Principle

A bipolar junction transistor is made up of three layers of semiconductor material, each layer having a different purpose. The base is the control layer; the collector is the power output layer; and the emitter is the power input layer. When a voltage is applied to the base-emitter junction of a bipolar junction transistor, the base-emitter diode conducts a current into the base. This current is then amplified and appears as a collector current that, in turn, is gained up and provides the output for the transistor.

A bipolar junction transistor amplifies the current that passes between the collector and emitter. This amplification process is known as gain, or current gain. The gain of a bipolar junction transistor is determined by the current flowing from the collector to the emitter and the ratio between the collector current and the base current. The gain of a bipolar junction transistor is called hFE.

The BCX70GE6327HTSA1 transistor has a typical hFE of 70, which is measured by applying a 5mA current to the base and measuring the collector current. The collector current should be 350mA, resulting in a gain of 70. The gain of a transistor is an important factor in determining its performance and can be used to adjust the amplification of the circuit.

The BCX70GE6327HTSA1 transistor can be used to amplify very small signal currents into larger ones. This makes it ideal for applications where signal precision and amplification is required, such as in radio receivers or audio amplifiers. It can also be used for switching applications, providing a reliable and consistent signal to the switching circuit.

Conclusion

The BCX70GE6327HTSA1 is a single bipolar junction transistor (BJT) that is designed for low voltage and high current amplification, switching, and interface circuits. It has a typical hFE of 70 and is capable of amplifying very small signal currents into larger ones. It can also be used for switching applications. Its features and application fields make it an ideal choice for many different types of circuits and applications.

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