BD17510STU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	30W
Frequency - Transition:	3MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126

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<p>The BD17510STU is a single bipolar transistor (BJT) that has become the preferred choice of many electronic designers in a wide range of applications. This versatile device is used in audio amplifiers, power management and various switching applications, making it an easy choice for engineers when designing products.</p><p>The BD17510STU is ideal for applications that require high voltage and high current. It is capable of handling voltages up to 150V with drain currents of up to 10A. The power dissipation capability of the device is also impressive, at up to 15W.</p><p>The device has a high current gain of up to 100, making it ideal for switching applications where it provides a high degree of control. The BD17510STU also has low on-resistance and low off-resistance which enables it to be used in applications that require low power consumption and high power efficiency.</p><p>The BD17510STU also has a low capacitance to minimize switching losses, allowing it to be used in high-speed switching applications. In addition, the device has a low reverse leakage to decrease power consumption during standby, and it has a high cutoff frequency of up to 180MHz.</p><p>The working principle of the BD17510STU is based on the operation of a BJT, or bipolar junction transistor. A BJT is a three-layer semiconductor device, consisting of two p-type regions and one n-type region. The junction between the two p-type regions is known as the emitter, and the junction between the n-type region and the emitter is known as the collector.</p><p>When a small electrical current is applied to the BJT’s base, it creates a large current in the collector-emitter path, allowing the BJT to act like a switch. The size of the current will depend on the base-emitter voltage, which is typically between 0.6 and 0.7 volts depending on the device.</p><p>The BD17510STU is designed to be used in applications where high currents and voltages need to be controlled, such as switching power supplies, DC-DC converters and audio amplifiers. It is a highly efficient device, able to handle up to 10A of current, 30V of voltage and 15W of power. It is also capable of running at speeds of up to 180MHz, making it a great choice for high-speed switching applications.</p>

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