BD17516STU Allicdata Electronics
Allicdata Part #:

BD17516STUFS-ND

Manufacturer Part#:

BD17516STU

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 3A TO-126
More Detail: Bipolar (BJT) Transistor NPN 45V 3A 3MHz 30W Throu...
DataSheet: BD17516STU datasheetBD17516STU Datasheet/PDF
Quantity: 4
1 +: $ 0.34650
10 +: $ 0.29610
100 +: $ 0.22113
500 +: $ 0.17377
1000 +: $ 0.13427
Stock 4Can Ship Immediately
$ 0.39
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Description

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The BD17516STU is a high-efficiency, high-speed, low-noise NPN power transistor. It is specially designed for the low-frequency power amplifier in VHF and UHF applications. It has excellent linearity, high maximum gain, high power gain, low noise, low offset voltage, and good over-current protection.

The BD17516STU is designed with a monolithic structure, built with high-quality silicon assemblies, epoxy-injected with an encapsulated package. This type of transistor is an NPN transistor and operates in linear mode.

The BD17516STU is a single bipolar transistor. It is rated for a maximum collector current and voltage of 24A and 30V, respectively. The BD17516STU is capable of providing a power output of up to 600W when used in bridge mode. A built-in protection circuit ensures that the BD17516STU does not receive an over-current surge or other dangers.

The BD17516STU is used in a wide range of high-power transceiver applications. This includes direct conversion transmitter and receiver amplifiers, oscillators, radio frequency amplifiers, bandwidth amplifiers, ID-UXOs, and pulsed power amplifiers. Additionally, this type of transistor is used in switch-mode power supplies and audio amplifiers.

The working principle of the device is based on utilizing its unimpeded current flow capabilities. Its construction is based on its PN junction, where conduction and blocking of current flow occur depending on voltage applied to the PN junction. When a positive voltage is applied to the base, a current is allowed to flow through the collector to the emitter. On the other hand, when a negative voltage is applied, the current flow is blocked. The gain of the device is based on the forward bias of the PN junction.

The BD17516STU features high-speed switching output, excellent thermal stability, and low crossover distortion. It also offers low noise and low impedance. Additionally, the BD17516STU guarantees exceptional reliability and excellent small-signal amplifying performance with low thermal resistance. Its low-noise performance makes it suitable for use in RF amplifiers. Its superior performance in broadband power applications makes it one of the best transistors available in the market.

Overall, the BD17516STU transistor is an ideal solution for high-power transceiver applications. It offers superior performance, excellent reliability, high-speed switching output, low noise, and low crossover distortion. The device’s low impedance and thermal resistance make it a suitable choice for RF amplifiers. With its high maximum gain, high power gain, and low noise, the BD17516STU is a powerful but reliable tool for manufacturers and engineers.

The specific data is subject to PDF, and the above content is for reference

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