BD17910STU

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BD17910STU Application Field and Work Principle

BD17910STU is a single bipolar junction transistor (BJT) device developed by ROHM Electronics UK Ltd. This device is widely used in applications ranging from audio amplifiers to power solenoid valves. The device is constructed of semiconductor material, making it very stable in regards to long term reliability and high temperature usage.

Features

BD17910STU offers several key features:

• High current capacity
• High voltage compatibility
• Low thermal resistance
• Very low on-state emitter saturation voltage
• High switching capabilities

Application Areas

BD17910STU is suitable for use in audio amplifier, power supply and motor control applications. It can also be used in power solenoid valves, where its low on-state emitter saturation voltage is beneficial. With the device\'s high current capacity and high voltage compatibility, it is well-suited for controlling large current levels.

Working Principle

BD17910STU works by applying a voltage across two base–emitter junctions. The voltage causes electrons to become excited from the inner shell of a semiconductor. When the electrons reach the base, they are able to move freely past the outer shell and travel across the collector–emitter junction, creating a current flow.

The device\'s low on-state emitter saturation voltage allows for an even lower voltage to be applied across the base–emitter junctions, thus enabling more electrons to be excited from the inner shell and creating a larger current flow across the collector–emitter junction. This in turn increases the device\'s overall power handling capacity.

Conclusion

BD17910STU is a single bipolar junction transistor (BJT) device developed by ROHM Electronics UK Ltd. It is suitable for use in audio amplifier, power supply, motor control, and power solenoid valve applications. The device\'s high current capacity and high voltage compatibility makes it ideal for controlling large current levels. Its low on-state emitter saturation voltage allows for a lower voltage to be applied across the base–emitter junctions, enabling more electrons to be excited from the inner shell of the semiconductor, leading to an increased current flow.

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