BD440G Allicdata Electronics
Allicdata Part #:

BD440G-ND

Manufacturer Part#:

BD440G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 4A TO-225AA
More Detail: Bipolar (BJT) Transistor PNP 60V 4A 3MHz 36W Throu...
DataSheet: BD440G datasheetBD440G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 36W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD440
Description

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Bipolar junction transistors, or BJTs, are semiconductor devices that are used for switching and amplification purposes. They are composed of two n-type semiconductors that are separated by a layer of p-type semiconductor material. A third layer, the control layer, is connected to the outer n-type layers and the p-type layer in the middle. This allows the current to flow from one n-type layer to the other through the control layer, altering the level of current passing through the transistor. BD440G is one such BJT, a single-transistor type, and has a wide range of applications in many different industries.

One of the primary uses of BD440G is as a switch in electronic systems, allowing current to flow through a circuit when the control layer is activated. This makes it useful in many areas of technology that require instantaneous switching of electrical current. It can also be used in amplifiers and oscillators, as well as power supplies. In addition, the BD440G can be used in electric sensing applications, such as temperature sensors and capacitive sensors.

The working principle of the BD440G makes use of the fact that it is composed of n- and p-type semiconductor material. A voltage applied to the control layer causes electrons to flow from the n-type layer to the p-type layer and then back to the n-type layer again. The effect of this is that the current which is passing through the transistor is modulated, controlling the amount of electricity flowing through the circuit. Thus, the amount of power generated can be controlled using the BD440G by adjusting the applied voltage.

In addition, the BD440G can be used in power supply designs, as the transistor can operate under high voltage and high current conditions. This makes it particularly useful in the design of power supplies, as the transistor can regulate the amount of power being supplied to the circuit. Furthermore, the BD440G has a relatively low output capacitance, which makes it suitable for use in high speed digital circuits.

The BD440G is highly versatile, being applicable to many kinds of circuits and industries. It is used in a wide range of applications, from consumer electronics and automotive electronics to industrial automation and energy management systems. In addition, it is used in consumer range digital signal processing and communication systems. Moreover, the device can be used in analog signal processing and power management.

The BD440G is an excellent example of a single-transistor BJT, offering great performance in a wide range of applications. Its versatility, combined with its solid performance, make it an ideal choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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