BD442 Allicdata Electronics

BD442 Discrete Semiconductor Products

Allicdata Part #:

BD442-ND

Manufacturer Part#:

BD442

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 4A TO-225AA
More Detail: Bipolar (BJT) Transistor PNP 80V 4A 3MHz 36W Throu...
DataSheet: BD442 datasheetBD442 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 36W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD442
Description

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The BD442 is a PNP epitaxial-base NPN power transistor manufactured by STMicroelectronics that is designed for use in medium-power linear and switching applications. It is one of ST\'s high power bipolar range, which caters for a wide range of applications in the industry. This article will discuss the application field and working principle of the BD442.

Application Field

The BD442 belongs to the high power bipolar range of transistors, which includes transistors manufactured by STMicroelectronics. This range caters for a wide range of applications, including linear, switching and small-signal applications. The BD442 is an epitaxial-base NPN power transistor and is primarily used in high-power linear and switching applications. It is designed to offer high speed switching, high current gain and high collector current.

The BD442 is suitable for use in inverters, switches, regulators, amplifiers, motor controllers, power supplies and other power-regulated applications. It can also be used in applications such as audio amplifiers, heating systems, motor controls and even high-power devices such as refrigerators.

Working Principle

The working principle of the BD442 can be explained by looking at the structure of the device. The BD442 is a three-layer PNP epitaxial-base NPN power transistor. It consists of an emitter, a base and a collector. The emitter is where current enters the transistor, and the base forms the switching element. The collector acts as an output for current. When a base-emitter junction is forward biased, current flows through the collector and out the emitter.

The BD442 is designed to offer high speed switching, high current gain and high collector current. When a voltage is applied to the base, it causes the base-emitter junction to become forward-biased, allowing current to flow through the collector. This current is regulated by the base current and is controlled by a resistance placed in series with the base electrode. When the base voltage is varied, so does the current flowing through the collector.

At higher collector currents, the BD442 is capable of switching rapidly, allowing for high-speed operation. The BD442 also offers high gain in both linear and switching mode, making it ideal for a range of applications.

Conclusion

The BD442 is an epitaxial-base NPN power transistor manufactured by STMicroelectronics. It is designed for use in high power linear and switching applications. The BD442 offers high speed switching, high current gain and high collector current, making it suitable for a range of applications, including audio amplifiers, heating systems, motor controls and high-power devices such as refrigerators. The BD442 is capable of switching rapidly and can be controlled by varying the base voltage.

The specific data is subject to PDF, and the above content is for reference

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