BD440S Allicdata Electronics
Allicdata Part #:

BD440S-ND

Manufacturer Part#:

BD440S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 4A TO-126
More Detail: Bipolar (BJT) Transistor PNP 60V 4A 3MHz 36W Throu...
DataSheet: BD440S datasheetBD440S Datasheet/PDF
Quantity: 1351
Stock 1351Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 36W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: BD440
Description

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The BD440S is a PNP silicon transistor used for a variety of different applications, such as amplification, switching, and current control. It is a high-gain device, meaning its small current variations can cause significant changes in collector current. For that reason, it is a powerful and efficient transistor for many different tasks.

The BD440S has a maximum power dissipation rating of 120W, a DC collector current of 4A, and a maximum collector-emitter voltage of 40V. This transistor typically requires higher base currents to ensure full saturation, so it is crucial that the device is correctly applied. Additionally, emitter-base voltage should never exceed 6V, as it can damage the transistors.

BD440S can be used in a variety of different circuits, ranging from audio amplifiers and computer-controlled motor drives to switching circuits and signal processing circuits. It is a versatile and effective component, as it can easily switch from a saturation mode to a cutoff or linear mode depending on the input signal. It is well suited for low-noise audio applications, as well as for radio frequency circuits that require high-frequency operation.

When it comes to the BD440S’s working principle, the device works in accordance with PNP bi-polar transistor structure. It features a common emitter configuration with a base pin, a collector pin, and an emitter pin, respectively. When the base voltage rises to a certain level, the electrons in the emitter start to transfer towards the collector, creating a current flow through the transistor. This collector current is amplified due to the base current, resulting in increased overall current. This type of transistor also features a high cut-off frequency, meaning it is well suited for high-frequency applications.

The BD440S is a great option for a wide range of applications. It is a high-gain device, meaning its current variations have a significant effect on its collection current. It typically requires higher base currents to ensure full saturation, so the device should be applied accordingly. Additionally, its common emitter configuration ensures high levels of amplification and its high cut-off frequency make it well-suited for high-frequency applications. Overall, the BD440S is an effective transistor solution for many different applications.

The specific data is subject to PDF, and the above content is for reference

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