Allicdata Part #: | BD533J-ND |
Manufacturer Part#: |
BD533J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 8A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 8A 12MHz 50W Thro... |
DataSheet: | BD533J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 2A, 2V |
Power - Max: | 50W |
Frequency - Transition: | 12MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Base Part Number: | BD533 |
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The BD533J transistor is a single bipolar junction transistor (BJT) typically used as a switch or amplifier. It was most commonly used as a replacement for the 2N404/2N407/2N409 series of transistors. This type of transistor is often used in applications such as high-frequency amplifiers, analog processors, audio amplifiers and low noise amplifiers. It is also used in high-power switching circuits and some integrated circuits.
Like other BJTs, the BD533J consists of three layers of doped semiconductor material, arranged in a sandwich structure, with two p-type layers (emitter and collector) separated by a single n-type layer (base). When a voltage is applied to the gate, a current flows through the emitter-base junction, and this voltage controls the amount of current flowing between collector and emitter. This current is amplified as it passes through the transistor, making it useful for both switching and amplifying external signals.
The BD533J is a relatively basic BJT. It has a current gain (hFE) of 40–100, a forward-biased collector-emitter voltage drop (VCE) of 30V, a maximum collector current (IC) of 0.5A, and a total power dissipation of 625mW. Its maximum operating temperature is 150°C, and it is designed for general-purpose applications.
The BD533J BJT is a widely-used transistor, employed in many applications. It is used in audio amplifiers, voltage-controlled amplifiers, switching power supplies and other power regulating circuits. It is also used in RF circuits, such as oscillators and mixers, as well as radio transmitters and receivers. Furthermore, it is used in many automotive applications, such as in electronic fuel injection control systems, speed controls and traction control systems.
The BD533J BJT transistor is designed for low-power applications, and it is relatively simple to use. All that is required is to connect the base to the signal signal source, the collector to the load and the emitter to ground. This simple circuit will provide an amplified version of the input signal to the load. This can be used to control the output, such as switching a lamp on and off, or controlling an LED circuit.
The BD533J transistor also has the advantage of being able to handle high input voltages, making it suitable for applications that require higher powers. For example, it can be used in high-power switching circuits, allowing it to be used in higher power applications than is possible with other transistors.
In conclusion, the BD533J is a versatile and reliable BJT transistor that is suitable for a wide range of general-purpose applications. This includes audio amplifiers, voltage-controlled amplifiers, power supplies, RF circuits, automotive applications and high-power switching circuits. It is relatively easy to use and can handle higher voltages than other transistors.
The specific data is subject to PDF, and the above content is for reference
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