BD539C-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1A, 5A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	12 @ 3A, 4V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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Introduction

BD539C-S is a bipolar junction transistor (BJT) that belongs to the single category. It is a high-speed bipolar transistor, popularly used in radio-frequency (RF) and high-frequency, large-signal amplifier applications.

Application Field

BD539C-S is typically used in high-frequency large-signal amplifiers and RF power amplifiers, such as AM, FM, and shortwave radio transmitters. It can be used in a variety of electronic equipments like oscillators and modulators, in which the signal transmission rate and fidelity of the signals must be maintained in a wide frequency range. Moreover, due to its high switching speed, it can also be used in switching and digital switching applications.

Working Principle

The working principle of the BD539C-S is based on the base current of the bipolar circuit structure. It consists of three terminals: an emitter, a collector, and a base. The current entering the base is amplified and transferred to the collector terminal. This current then drives the load attached to the collector terminal and amplifies the magnitude of the input signal applied at the base. The base current increases as the base–emitter voltage (VBE) increases. The voltage applied between collector and emitter terminals is a direct result of the current gain (β), referred to as the current gain of the transistor (hFE). It is essentially the ratio of the collector current to the base current. The current gain of BD539C-S can be adjusted with an external resistor connected between the base and collector terminals. This can be used to limit the collector current and achieve the desired current gain setting.

Conclusion

The BD539C-S is a high-speed, high-frequency bipolar junction transistor that is well-suited for use in RF and high-frequency large-signal amplifier applications. It is primarily used for radio-frequency transmission, as well as digital switching and oscillator/modulator applications. Its operation is based on the base current of the bipolar circuit structure, where the current gain of the transistor can be adjusted with an external resistor connected between its base and collector terminals.

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