BD537KTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 2A, 2V
Power - Max:	50W
Frequency - Transition:	12MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Base Part Number:	BD537

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Introduction

BD537KTU is a commonly used single NPN bipolar junction transistor manufactured by Infineon Technologies. It is used in a wide range of applications, including the control of high-power devices such as motors, relays, lamps and solenoids. This article will provide a detailed overview of the BD537KTU device and its applications, as well as its working principle.

Description of BD537KTU

The BD537KTU is a medium power NPN bipolar junction transistor that can handle collector currents of up to 200 mA and can operate at supply voltages ranging from 5 V to 18 V. The device has an hFE of 50 to 200 and a small junction capacitance of 8.2 pF. The BD537KTU is hermetically sealed with a TO-39 metal can, which allows it to be used in harsh environments and protects it from moisture. The device also features a fast turn-on time which makes it ideal for switching applications.

Application Field of BD537KTU

The BD537KTU is most commonly used in applications requiring high-power control and switching, such as motor control and lamp dimming. It can also be used for amplifier and oscillator circuits, as well as for audio and visual signal switching. The device is also used in robotics, electronics projects, and experimentation.

Working Principle of BD537KTU

The BD537KTU operates on the principle of majority carrier injection. The operation is based on the flow of majority carriers between the emitter and the base of the device. The number of these carriers is determined by the applied voltage. When the base-emitter voltage increases, more majority carriers are injected into the base region, and these carriers are then collected by the emitter-collector junction, producing an amplified current.

Conclusion

The BD537KTU is a versatile NPN bipolar junction transistor that is widely used for applications requiring high-power control and switching. It is hermetically sealed and offers fast switching, making it ideal for applications such as motor control and lamp dimming. The device operates on the principle of majority carrier injection, using the flow of charge carriers between the emitter and base to produce an amplified current.

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